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Adaptive refreshing and read voltage control scheme for FeDRAM

Publication ,  Conference
Bayram, I; Eken, E; Wang, X; Sun, X; Ma, TP; Chen, Y
Published in: Proceedings - IEEE International Symposium on Circuits and Systems
July 29, 2016

Ferroelectric Field Effect Transistor (FeFET) is a promising nonvolatile device which provides high integration density, fast programming speed, and excellent CMOS compatibility. In general, the non-volatility of FeFET is impacted by its physical structure and there is a trade-off between data retention time and device endurance. To improve the cell endurance, for example, the ferroelectric layer of FeFET needs to be programmed to a low polarization level, leading to a short retention time. In ferroelectric DRAM (FeDRAM) design, degradation in FeFET retention time and write-read disturbance requires the FeDRAM cells to b e periodically refreshed in order to prevent data loss. In this work, we propose a novel adaptive refreshing and read voltage control scheme to minimize the energy overheads associated with FeDRAM refreshing while still achieve high cell access reliability.

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Published In

Proceedings - IEEE International Symposium on Circuits and Systems

DOI

ISSN

0271-4310

ISBN

9781479953400

Publication Date

July 29, 2016

Volume

2016-July

Start / End Page

1154 / 1157
 

Citation

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Bayram, I., Eken, E., Wang, X., Sun, X., Ma, T. P., & Chen, Y. (2016). Adaptive refreshing and read voltage control scheme for FeDRAM. In Proceedings - IEEE International Symposium on Circuits and Systems (Vol. 2016-July, pp. 1154–1157). https://doi.org/10.1109/ISCAS.2016.7527450
Bayram, I., E. Eken, X. Wang, X. Sun, T. P. Ma, and Y. Chen. “Adaptive refreshing and read voltage control scheme for FeDRAM.” In Proceedings - IEEE International Symposium on Circuits and Systems, 2016-July:1154–57, 2016. https://doi.org/10.1109/ISCAS.2016.7527450.
Bayram I, Eken E, Wang X, Sun X, Ma TP, Chen Y. Adaptive refreshing and read voltage control scheme for FeDRAM. In: Proceedings - IEEE International Symposium on Circuits and Systems. 2016. p. 1154–7.
Bayram, I., et al. “Adaptive refreshing and read voltage control scheme for FeDRAM.” Proceedings - IEEE International Symposium on Circuits and Systems, vol. 2016-July, 2016, pp. 1154–57. Scopus, doi:10.1109/ISCAS.2016.7527450.
Bayram I, Eken E, Wang X, Sun X, Ma TP, Chen Y. Adaptive refreshing and read voltage control scheme for FeDRAM. Proceedings - IEEE International Symposium on Circuits and Systems. 2016. p. 1154–1157.

Published In

Proceedings - IEEE International Symposium on Circuits and Systems

DOI

ISSN

0271-4310

ISBN

9781479953400

Publication Date

July 29, 2016

Volume

2016-July

Start / End Page

1154 / 1157