Scholars@Duke publication: Asymmetry in STT-RAM cell operations

Emerging Memory Technologies: Design, Architecture, and Applications

Asymmetry in STT-RAM cell operations

Publication , Chapter

Zhang, Y; Wen, W; Chen, Y

January 1, 2011

Spin-transfer torque random access memory (STT-RAM) has emerged as a promising technology to replace SRAM and DRAM in embedded memory applications. In STT-RAM, the data are stored in a magnetic device (magnetic tunneling junction or MTJ) as different resistance states. The unique data storage mechanism of STT-RAM introduces the different design optimization concerns from conventional memories. As one important characteristic, programming 1 and 0 into an STT-RAM cell is very asymmetric in terms of performance, power, and reliability. In this chapter, we will review this asymmetry and analyze its sources. The impacts of this asymmetry on the STT-RAM cell optimization will be also discussed, followed by the introduction on a model to simulate the STT-RAM cell asymmetry.

Duke Scholars

Author Yiran Chen Electrical and Computer Engineering

DOI

10.1007/978-1-4419-9551-3_5

ISBN

9781441995506

Publication Date

January 1, 2011

Volume

9781441995513

Start / End Page

117 / 144

Citation

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Zhang, Y., Wen, W., & Chen, Y. (2011). Asymmetry in STT-RAM cell operations. In Emerging Memory Technologies: Design, Architecture, and Applications (Vol. 9781441995513, pp. 117–144). https://doi.org/10.1007/978-1-4419-9551-3_5

Zhang, Y., W. Wen, and Y. Chen. “Asymmetry in STT-RAM cell operations.” In Emerging Memory Technologies: Design, Architecture, and Applications, 9781441995513:117–44, 2011. https://doi.org/10.1007/978-1-4419-9551-3_5.

Zhang Y, Wen W, Chen Y. Asymmetry in STT-RAM cell operations. In: Emerging Memory Technologies: Design, Architecture, and Applications. 2011. p. 117–44.

Zhang, Y., et al. “Asymmetry in STT-RAM cell operations.” Emerging Memory Technologies: Design, Architecture, and Applications, vol. 9781441995513, 2011, pp. 117–44. Scopus, doi:10.1007/978-1-4419-9551-3_5.

Zhang Y, Wen W, Chen Y. Asymmetry in STT-RAM cell operations. Emerging Memory Technologies: Design, Architecture, and Applications. 2011. p. 117–144.

DOI

10.1007/978-1-4419-9551-3_5

ISBN

9781441995506

Publication Date

January 1, 2011

Volume

9781441995513

Start / End Page

117 / 144