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CD-ECC: Content-dependent error correction codes for combating asymmetric nonvolatile memory operation errors

Publication ,  Conference
Wen, W; Mao, M; Zhu, X; Kang, SH; Wang, D; Chen, Y
Published in: IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD
December 1, 2013

The write operation asymmetry of many memory technologies causes different write failure rates at 0 →1 and 1 → 0 bit-flipping's. Conventional error correction codes (ECCs) spend the same efforts on both bit-flipping directions, leading to very unbalanced write reliability enchantment over different bit-flipping distributions of codewords (i.e., the number of 0 →1 or 1 → 0 bit-flipping's). In this work, we developed an analytic asymmetric write channel (AWC) model to analyze the asymmetric write errors in spin-transfer torque random access memory (STT-RAM) designs. A new ECC design concept, namely, content-dependent ECC (CD-ECC), is proposed to achieve balanced error correction at both bit-flipping directions. Two CD-ECC schemes - typical-corner-ECC (TCE) and worst-corner-ECC (WCE), are designed for the codewords with different bit-flipping distributions. Our simulation results show that compared to the common ECC schemes utilized in embedded applications like Hamming code, CD-ECCs can improve the STT-RAM write reliability by 10 - 30x with low hardware overhead and very marginal impact on system performance. © 2013 IEEE.

Duke Scholars

Published In

IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD

DOI

ISSN

1092-3152

Publication Date

December 1, 2013

Start / End Page

1 / 8
 

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Wen, W., Mao, M., Zhu, X., Kang, S. H., Wang, D., & Chen, Y. (2013). CD-ECC: Content-dependent error correction codes for combating asymmetric nonvolatile memory operation errors. In IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD (pp. 1–8). https://doi.org/10.1109/ICCAD.2013.6691090
Wen, W., M. Mao, X. Zhu, S. H. Kang, D. Wang, and Y. Chen. “CD-ECC: Content-dependent error correction codes for combating asymmetric nonvolatile memory operation errors.” In IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD, 1–8, 2013. https://doi.org/10.1109/ICCAD.2013.6691090.
Wen W, Mao M, Zhu X, Kang SH, Wang D, Chen Y. CD-ECC: Content-dependent error correction codes for combating asymmetric nonvolatile memory operation errors. In: IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD. 2013. p. 1–8.
Wen, W., et al. “CD-ECC: Content-dependent error correction codes for combating asymmetric nonvolatile memory operation errors.” IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD, 2013, pp. 1–8. Scopus, doi:10.1109/ICCAD.2013.6691090.
Wen W, Mao M, Zhu X, Kang SH, Wang D, Chen Y. CD-ECC: Content-dependent error correction codes for combating asymmetric nonvolatile memory operation errors. IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD. 2013. p. 1–8.

Published In

IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD

DOI

ISSN

1092-3152

Publication Date

December 1, 2013

Start / End Page

1 / 8