A synapse memristor model with forgetting effect
Publication
, Journal Article
Chen, L; Li, C; Huang, T; Chen, Y; Wen, S; Qi, J
Published in: Physics Letters, Section A: General, Atomic and Solid State Physics
December 17, 2013
In this Letter we improved the ion diffusion term proposed in literature [13] and redesigned the previous model as a dynamical model with two more internal state variables 'forgetting rate' and 'retention' besides the original variable 'conductance'. The new model can not only describe the basic memory ability of memristor but also be able to capture the new finding forgetting behavior in memristor. And different from the previous model, the transition from short term memory to long term memory is also defined by the new model. Besides, the new model is better matched with the physical memristor (Pd/WOx/W) than the previous one. © 2013 Elsevier B.V. All rights reserved.
Duke Scholars
Published In
Physics Letters, Section A: General, Atomic and Solid State Physics
DOI
ISSN
0375-9601
Publication Date
December 17, 2013
Volume
377
Issue
45-48
Start / End Page
3260 / 3265
Related Subject Headings
- Fluids & Plasmas
- 51 Physical sciences
- 49 Mathematical sciences
- 02 Physical Sciences
- 01 Mathematical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Chen, L., Li, C., Huang, T., Chen, Y., Wen, S., & Qi, J. (2013). A synapse memristor model with forgetting effect. Physics Letters, Section A: General, Atomic and Solid State Physics, 377(45–48), 3260–3265. https://doi.org/10.1016/j.physleta.2013.10.024
Chen, L., C. Li, T. Huang, Y. Chen, S. Wen, and J. Qi. “A synapse memristor model with forgetting effect.” Physics Letters, Section A: General, Atomic and Solid State Physics 377, no. 45–48 (December 17, 2013): 3260–65. https://doi.org/10.1016/j.physleta.2013.10.024.
Chen L, Li C, Huang T, Chen Y, Wen S, Qi J. A synapse memristor model with forgetting effect. Physics Letters, Section A: General, Atomic and Solid State Physics. 2013 Dec 17;377(45–48):3260–5.
Chen, L., et al. “A synapse memristor model with forgetting effect.” Physics Letters, Section A: General, Atomic and Solid State Physics, vol. 377, no. 45–48, Dec. 2013, pp. 3260–65. Scopus, doi:10.1016/j.physleta.2013.10.024.
Chen L, Li C, Huang T, Chen Y, Wen S, Qi J. A synapse memristor model with forgetting effect. Physics Letters, Section A: General, Atomic and Solid State Physics. 2013 Dec 17;377(45–48):3260–3265.
Published In
Physics Letters, Section A: General, Atomic and Solid State Physics
DOI
ISSN
0375-9601
Publication Date
December 17, 2013
Volume
377
Issue
45-48
Start / End Page
3260 / 3265
Related Subject Headings
- Fluids & Plasmas
- 51 Physical sciences
- 49 Mathematical sciences
- 02 Physical Sciences
- 01 Mathematical Sciences