Spintronic memristor devices and application
Publication
, Conference
Wang, X; Chen, Y
Published in: Proceedings -Design, Automation and Test in Europe, DATE
June 9, 2010
Spintronic memristor devices based upon spin torque induced magnetization motion are presented and potential application examples are given. The structure and material of these proposed spin torque memristors are based upon existing (and/or commercialized) magnetic devices and can be easily integrated on top of a CMOS. This provides better controllability and flexibility to realize the promises of nanoscale memristors. Utilizing its unique device behavior, the paper explores spintronic memristor potential applications in multibit data storage and logic, novel sensing scheme, power management and information security. © 2010 EDAA.
Duke Scholars
Published In
Proceedings -Design, Automation and Test in Europe, DATE
ISSN
1530-1591
Publication Date
June 9, 2010
Start / End Page
667 / 672
Citation
APA
Chicago
ICMJE
MLA
NLM
Wang, X., & Chen, Y. (2010). Spintronic memristor devices and application. In Proceedings -Design, Automation and Test in Europe, DATE (pp. 667–672).
Wang, X., and Y. Chen. “Spintronic memristor devices and application.” In Proceedings -Design, Automation and Test in Europe, DATE, 667–72, 2010.
Wang X, Chen Y. Spintronic memristor devices and application. In: Proceedings -Design, Automation and Test in Europe, DATE. 2010. p. 667–72.
Wang, X., and Y. Chen. “Spintronic memristor devices and application.” Proceedings -Design, Automation and Test in Europe, DATE, 2010, pp. 667–72.
Wang X, Chen Y. Spintronic memristor devices and application. Proceedings -Design, Automation and Test in Europe, DATE. 2010. p. 667–672.
Published In
Proceedings -Design, Automation and Test in Europe, DATE
ISSN
1530-1591
Publication Date
June 9, 2010
Start / End Page
667 / 672