Low-power dual-element memristor based memory design
Recently, the emerging memristor device technology has attracted significant research interests due to its distinctive hysteresis characteristic, which potentially can enable novel circuit designs for future VLSI circuits. In particular, characteristics such as non-volatility, non-linearity, low power consumption, and good scalability make memristor one of the most promising emerging memory technologies. Some important design parameter, however, such as speed, energy consumption, and distingushiablility, are mainly determined by the memristor's physical characteristics. In this paper, a key observation of memristor's asymmetric energy consumption is made by the detailed analysis of the transient power consumption. Based on this observation, we propose a dual-element memory structure in which each memory cell consists of two memristors. By constantly writing complement bits into the two elements within a cell, the dual-element is exible to satisfy design constraints which are usually difficult to be satisfied with one-cell memory structure. Design space of the dual-element memory cell is studied and it shows that the trade-offs among the energy, speed, and distingushi ablility should be explored for different design objectives. In particular, we show that under the energy-driven optimization, the proposed dual-element memory achieves the same programming speed and distinguishability as conventional single-element memory but the energy consumption can be reduced by up to 80%. Copyright 2010 ACM.
