Brown, J. J., Brown, A. S., Rosenbaum, S. E., Schmitz, A. S., Matloubian, M., Larson, L. E., … Thompson, M. A. (1993). Study of the dependence of Ga 0.47 In 0.53 As/Al x In 1-x As power HEMT breakdown voltage on schottky layer design and device layout. In Device Research Conference - Conference Digest, DRC (Vol. Part F146191). https://doi.org/10.1109/DRC.1993.1009579

Brown, J. J., A. S. Brown, S. E. Rosenbaum, A. S. Schmitz, M. Matloubian, L. E. Larson, M. A. Melendes, and M. A. Thompson. “Study of the dependence of Ga 0.47 In 0.53 As/Al x In 1-x As power HEMT breakdown voltage on schottky layer design and device layout.” In Device Research Conference - Conference Digest, DRC, Vol. Part F146191, 1993. https://doi.org/10.1109/DRC.1993.1009579.

Brown JJ, Brown AS, Rosenbaum SE, Schmitz AS, Matloubian M, Larson LE, et al. Study of the dependence of Ga 0.47 In 0.53 As/Al x In 1-x As power HEMT breakdown voltage on schottky layer design and device layout. In: Device Research Conference - Conference Digest, DRC. 1993.

Brown, J. J., et al. “Study of the dependence of Ga 0.47 In 0.53 As/Al x In 1-x As power HEMT breakdown voltage on schottky layer design and device layout.” Device Research Conference - Conference Digest, DRC, vol. Part F146191, 1993. Scopus, doi:10.1109/DRC.1993.1009579.

Brown JJ, Brown AS, Rosenbaum SE, Schmitz AS, Matloubian M, Larson LE, Melendes MA, Thompson MA. Study of the dependence of Ga 0.47 In 0.53 As/Al x In 1-x As power HEMT breakdown voltage on schottky layer design and device layout. Device Research Conference - Conference Digest, DRC. 1993.