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Solution-based synthesis of kesterite thin film semiconductors

Publication ,  Journal Article
Todorov, T; Hillhouse, HW; Aazou, S; Sekkat, Z; Vigil-Galán, O; Deshmukh, SD; Agrawal, R; Bourdais, S; Valdés, M; Arnou, P; Mitzi, DB; Dale, PJ
Published in: JPhys Energy
January 1, 2020

Large-scale deployment of photovoltaic modules is required to power our renewable energy future. Kesterite, Cu2ZnSn(S, Se)4, is a p-type semiconductor absorber layer with a tunable bandgap consisting of earth abundant elements, and is seen as a potential 'drop-in' replacement to Cu(In,Ga)Se2 in thin film solar cells. Currently, the record light-to-electrical power conversion efficiency (PCE) of kesterite-based devices is 12.6%, for which the absorber layer has been solution-processed. This efficiency must be increased if kesterite technology is to help power the future. Therefore two questions arise: what is the best way to synthesize the film? And how to improve the device efficiency? Here, we focus on the first question from a solution-based synthesis perspective. The main strategy is to mix all the elements together initially and coat them on a surface, followed by annealing in a reactive chalcogen atmosphere to react, grow grains and sinter the film. The main difference between the methods presented here is how easily the solvent, ligands, and anions are removed. Impurities impair the ability to achieve high performance (>∼10% PCE) in kesterite devices. Hydrazine routes offer the least impurities, but have environmental and safety concerns associated with hydrazine. Aprotic and protic based molecular inks are environmentally friendlier and less toxic, but they require the removal of organic and halogen species associated with the solvent and precursors, which is challenging but possible. Nanoparticle routes consisting of kesterite (or binary chalcogenides) particles require the removal of stabilizing ligands from their surfaces. Electrodeposited layers contain few impurities but are sometimes difficult to make compositionally uniform over large areas, and for metal deposited layers, they have to go through several solid-state reaction steps to form kesterite. Hence, each method has distinct advantages and disadvantages. We review the state-of-the art of each and provide perspective on the different strategies.

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Published In

JPhys Energy

DOI

EISSN

2515-7655

Publication Date

January 1, 2020

Volume

2

Issue

1

Related Subject Headings

  • 4017 Mechanical engineering
  • 4008 Electrical engineering
  • 4004 Chemical engineering
 

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Todorov, T., Hillhouse, H. W., Aazou, S., Sekkat, Z., Vigil-Galán, O., Deshmukh, S. D., … Dale, P. J. (2020). Solution-based synthesis of kesterite thin film semiconductors. JPhys Energy, 2(1). https://doi.org/10.1088/2515-7655/ab3a81
Todorov, T., H. W. Hillhouse, S. Aazou, Z. Sekkat, O. Vigil-Galán, S. D. Deshmukh, R. Agrawal, et al. “Solution-based synthesis of kesterite thin film semiconductors.” JPhys Energy 2, no. 1 (January 1, 2020). https://doi.org/10.1088/2515-7655/ab3a81.
Todorov T, Hillhouse HW, Aazou S, Sekkat Z, Vigil-Galán O, Deshmukh SD, et al. Solution-based synthesis of kesterite thin film semiconductors. JPhys Energy. 2020 Jan 1;2(1).
Todorov, T., et al. “Solution-based synthesis of kesterite thin film semiconductors.” JPhys Energy, vol. 2, no. 1, Jan. 2020. Scopus, doi:10.1088/2515-7655/ab3a81.
Todorov T, Hillhouse HW, Aazou S, Sekkat Z, Vigil-Galán O, Deshmukh SD, Agrawal R, Bourdais S, Valdés M, Arnou P, Mitzi DB, Dale PJ. Solution-based synthesis of kesterite thin film semiconductors. JPhys Energy. 2020 Jan 1;2(1).

Published In

JPhys Energy

DOI

EISSN

2515-7655

Publication Date

January 1, 2020

Volume

2

Issue

1

Related Subject Headings

  • 4017 Mechanical engineering
  • 4008 Electrical engineering
  • 4004 Chemical engineering