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Improving Write Performance on Cross-Point RRAM Arrays by Leveraging Multidimensional Non-Uniformity of Cell Effective Voltage

Publication ,  Journal Article
Wang, C; Feng, D; Tong, W; Liu, J; Wu, B; Zhao, W; Zhang, Y; Chen, Y
Published in: IEEE Transactions on Computers
April 1, 2021

Resistive cross-point memory arrays can be used to construct high-density storage-class memory. However, coupled IR drop and sneak currents cause multidimensional non-uniformity of cell effective voltage in cross-point arrays. The voltage non-uniformity significantly degrades write performance on cross-point memory if only adopting the worst-case write latency at partial dimensions. Furthermore, the non-uniformity of cell effective voltage in cross-point arrays depends on multidimensional dynamic write operation parameters: row, column as well as layer address, the number of selected cells, and the number of half-selected low-resistance state cells. In this article, we aim to improve the write performance by leveraging multidimensional non-uniformity of cell effective voltage. First, we analyze the impact of multidimensional write parameters on effective voltage and write latency. Then, we design the memory array write scheme that measures the write parameters and sets the write latency accordingly. We further analyze the features and effects of interlayer sneak currents and extend the scheme to 3D cross-point memory. The evaluation shows that the proposed memory array write scheme can reduce the memory access latency by 75.6 and 64.1 percent, and improve the system performance by 4.5 times and 3.4 times on average, compared with the baseline and the state-of-the-art approach, respectively.

Duke Scholars

Published In

IEEE Transactions on Computers

DOI

EISSN

1557-9956

ISSN

0018-9340

Publication Date

April 1, 2021

Volume

70

Issue

4

Start / End Page

566 / 580

Related Subject Headings

  • Computer Hardware & Architecture
  • 4606 Distributed computing and systems software
  • 4009 Electronics, sensors and digital hardware
  • 1006 Computer Hardware
  • 0805 Distributed Computing
  • 0803 Computer Software
 

Citation

APA
Chicago
ICMJE
MLA
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Wang, C., Feng, D., Tong, W., Liu, J., Wu, B., Zhao, W., … Chen, Y. (2021). Improving Write Performance on Cross-Point RRAM Arrays by Leveraging Multidimensional Non-Uniformity of Cell Effective Voltage. IEEE Transactions on Computers, 70(4), 566–580. https://doi.org/10.1109/TC.2020.2990884
Wang, C., D. Feng, W. Tong, J. Liu, B. Wu, W. Zhao, Y. Zhang, and Y. Chen. “Improving Write Performance on Cross-Point RRAM Arrays by Leveraging Multidimensional Non-Uniformity of Cell Effective Voltage.” IEEE Transactions on Computers 70, no. 4 (April 1, 2021): 566–80. https://doi.org/10.1109/TC.2020.2990884.
Wang C, Feng D, Tong W, Liu J, Wu B, Zhao W, et al. Improving Write Performance on Cross-Point RRAM Arrays by Leveraging Multidimensional Non-Uniformity of Cell Effective Voltage. IEEE Transactions on Computers. 2021 Apr 1;70(4):566–80.
Wang, C., et al. “Improving Write Performance on Cross-Point RRAM Arrays by Leveraging Multidimensional Non-Uniformity of Cell Effective Voltage.” IEEE Transactions on Computers, vol. 70, no. 4, Apr. 2021, pp. 566–80. Scopus, doi:10.1109/TC.2020.2990884.
Wang C, Feng D, Tong W, Liu J, Wu B, Zhao W, Zhang Y, Chen Y. Improving Write Performance on Cross-Point RRAM Arrays by Leveraging Multidimensional Non-Uniformity of Cell Effective Voltage. IEEE Transactions on Computers. 2021 Apr 1;70(4):566–580.

Published In

IEEE Transactions on Computers

DOI

EISSN

1557-9956

ISSN

0018-9340

Publication Date

April 1, 2021

Volume

70

Issue

4

Start / End Page

566 / 580

Related Subject Headings

  • Computer Hardware & Architecture
  • 4606 Distributed computing and systems software
  • 4009 Electronics, sensors and digital hardware
  • 1006 Computer Hardware
  • 0805 Distributed Computing
  • 0803 Computer Software