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Optoelectronic property comparison for isostructural Cu2BaGeSe4and Cu2BaSnS4solar absorbers

Publication ,  Journal Article
Kim, Y; Hempel, H; Levcenco, S; Euvrard, J; Bergmann, E; Gunawan, O; Unold, T; Hill, IG; Mitzi, DB
Published in: Journal of Materials Chemistry A
November 7, 2021

To target mitigation of anti-site defect formation in Cu2ZnSnS4−xSex, a new class of chalcogenides, for which Ba or Sr (group 2) replace Zn (group 12), has recently been introduced for prospective solar absorber application. Cu2BaGeSe4(CBGSe) and Cu2BaSnS4(CBTS) are two such compounds, which share a common trigonal crystal structure (P31space group) and similar quasi-direct band gap (∼2 eV). While CBTS-based films have already been studied, there are no reports yet on films and solar cells based on related CBGSe. To identify key differences and similarities in the electronic properties between these two materials, electronic characteristics (e.g., carrier concentration, mobility, electron affinity, defect levels, recombination, and charge carrier kinetics) of vacuum-deposited CBGSe and CBTS films are compared using a variety of characterization methods. Hall effect measurements reveal that CBGSe films have relatively higher hole carrier concentration and lower mobility (3 × 1015cm−3, 0.6 cm2V−1s−1) compared to CBTS (5 × 1012cm−3, 3.5 cm2V−1s−1). Photoelectron spectroscopy yields low electron affinity values for both CBGSe (3.7 eV) and CBTS (3.3 eV), pointing to the necessity of pursuing low electron affinity buffer materials for both types of absorbers. At low temperatures, CBGSe films show free-exciton photoluminescence, as well as pronounced deep-level emission at ∼1.4 eV, while CBTS films exhibit a strong bound-exciton signal with noticeably less intense deep-level emission than for CBGSe. Charge carrier kinetics, transport, and recombination properties of both types of films are also analyzed using optical-pump terahertz-probe spectroscopy and time-resolved microwave conductivity. The first CBGSe prototype solar cells (using chemical bath deposited CdS as a buffer layer) show a maximum of 1.5% efficiency with ∼0.62 V open-circuit voltage. The measured properties point to possible limiting factors for CBGSe and related films for PV and optoelectronics and provide insights on possible approaches for improvement within this multinary chalcogenide family.

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Published In

Journal of Materials Chemistry A

DOI

EISSN

2050-7496

ISSN

2050-7488

Publication Date

November 7, 2021

Volume

9

Issue

41

Start / End Page

23619 / 23630

Related Subject Headings

  • 4016 Materials engineering
  • 4004 Chemical engineering
  • 3403 Macromolecular and materials chemistry
  • 0915 Interdisciplinary Engineering
  • 0912 Materials Engineering
  • 0303 Macromolecular and Materials Chemistry
 

Citation

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Kim, Y., Hempel, H., Levcenco, S., Euvrard, J., Bergmann, E., Gunawan, O., … Mitzi, D. B. (2021). Optoelectronic property comparison for isostructural Cu2BaGeSe4and Cu2BaSnS4solar absorbers. Journal of Materials Chemistry A, 9(41), 23619–23630. https://doi.org/10.1039/d1ta05666b
Kim, Y., H. Hempel, S. Levcenco, J. Euvrard, E. Bergmann, O. Gunawan, T. Unold, I. G. Hill, and D. B. Mitzi. “Optoelectronic property comparison for isostructural Cu2BaGeSe4and Cu2BaSnS4solar absorbers.” Journal of Materials Chemistry A 9, no. 41 (November 7, 2021): 23619–30. https://doi.org/10.1039/d1ta05666b.
Kim Y, Hempel H, Levcenco S, Euvrard J, Bergmann E, Gunawan O, et al. Optoelectronic property comparison for isostructural Cu2BaGeSe4and Cu2BaSnS4solar absorbers. Journal of Materials Chemistry A. 2021 Nov 7;9(41):23619–30.
Kim, Y., et al. “Optoelectronic property comparison for isostructural Cu2BaGeSe4and Cu2BaSnS4solar absorbers.” Journal of Materials Chemistry A, vol. 9, no. 41, Nov. 2021, pp. 23619–30. Scopus, doi:10.1039/d1ta05666b.
Kim Y, Hempel H, Levcenco S, Euvrard J, Bergmann E, Gunawan O, Unold T, Hill IG, Mitzi DB. Optoelectronic property comparison for isostructural Cu2BaGeSe4and Cu2BaSnS4solar absorbers. Journal of Materials Chemistry A. 2021 Nov 7;9(41):23619–23630.
Journal cover image

Published In

Journal of Materials Chemistry A

DOI

EISSN

2050-7496

ISSN

2050-7488

Publication Date

November 7, 2021

Volume

9

Issue

41

Start / End Page

23619 / 23630

Related Subject Headings

  • 4016 Materials engineering
  • 4004 Chemical engineering
  • 3403 Macromolecular and materials chemistry
  • 0915 Interdisciplinary Engineering
  • 0912 Materials Engineering
  • 0303 Macromolecular and Materials Chemistry