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A 1.041-Mb/mm227.38-TOPS/W Signed-INT8 Dynamic-Logic-Based ADC-less SRAM Compute-in-Memory Macro in 28nm with Reconfigurable Bitwise Operation for AI and Embedded Applications

Publication ,  Conference
Yan, B; Hsu, JL; Yu, PC; Lee, CC; Zhang, Y; Yue, W; Mei, G; Yang, Y; Li, H; Chen, Y; Huang, R
Published in: Digest of Technical Papers IEEE International Solid State Circuits Conference
January 1, 2022

Advanced intelligent embedded systems perform cognitive tasks with highly-efficient vector-processing units for deep neural network (DNN) inference and other vector-based signal processing using limited power. SRAM-based compute-in-memory (CIM) achieves high energy efficiency for vector-matrix multiplications, offers <1ns read/write speed, and saves vastly repeating memory accesses. However, prior SRAM CIM macros require a large area for compute circuits (either using ADC for analog CIM [1- 4] or CMOS static logic for all-digital CIM [5-6]), have limited CIM functions, and use fixed vector-processing dimensions that cause a low-spatial-utilization rate when deploying DNN (Fig. 11.7.1).

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Published In

Digest of Technical Papers IEEE International Solid State Circuits Conference

DOI

ISSN

0193-6530

Publication Date

January 1, 2022

Volume

2022-February

Start / End Page

188 / 190
 

Citation

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Yan, B., Hsu, J. L., Yu, P. C., Lee, C. C., Zhang, Y., Yue, W., … Huang, R. (2022). A 1.041-Mb/mm227.38-TOPS/W Signed-INT8 Dynamic-Logic-Based ADC-less SRAM Compute-in-Memory Macro in 28nm with Reconfigurable Bitwise Operation for AI and Embedded Applications. In Digest of Technical Papers IEEE International Solid State Circuits Conference (Vol. 2022-February, pp. 188–190). https://doi.org/10.1109/ISSCC42614.2022.9731545
Yan, B., J. L. Hsu, P. C. Yu, C. C. Lee, Y. Zhang, W. Yue, G. Mei, et al. “A 1.041-Mb/mm227.38-TOPS/W Signed-INT8 Dynamic-Logic-Based ADC-less SRAM Compute-in-Memory Macro in 28nm with Reconfigurable Bitwise Operation for AI and Embedded Applications.” In Digest of Technical Papers IEEE International Solid State Circuits Conference, 2022-February:188–90, 2022. https://doi.org/10.1109/ISSCC42614.2022.9731545.
Yan B, Hsu JL, Yu PC, Lee CC, Zhang Y, Yue W, et al. A 1.041-Mb/mm227.38-TOPS/W Signed-INT8 Dynamic-Logic-Based ADC-less SRAM Compute-in-Memory Macro in 28nm with Reconfigurable Bitwise Operation for AI and Embedded Applications. In: Digest of Technical Papers IEEE International Solid State Circuits Conference. 2022. p. 188–90.
Yan, B., et al. “A 1.041-Mb/mm227.38-TOPS/W Signed-INT8 Dynamic-Logic-Based ADC-less SRAM Compute-in-Memory Macro in 28nm with Reconfigurable Bitwise Operation for AI and Embedded Applications.” Digest of Technical Papers IEEE International Solid State Circuits Conference, vol. 2022-February, 2022, pp. 188–90. Scopus, doi:10.1109/ISSCC42614.2022.9731545.
Yan B, Hsu JL, Yu PC, Lee CC, Zhang Y, Yue W, Mei G, Yang Y, Li H, Chen Y, Huang R. A 1.041-Mb/mm227.38-TOPS/W Signed-INT8 Dynamic-Logic-Based ADC-less SRAM Compute-in-Memory Macro in 28nm with Reconfigurable Bitwise Operation for AI and Embedded Applications. Digest of Technical Papers IEEE International Solid State Circuits Conference. 2022. p. 188–190.

Published In

Digest of Technical Papers IEEE International Solid State Circuits Conference

DOI

ISSN

0193-6530

Publication Date

January 1, 2022

Volume

2022-February

Start / End Page

188 / 190