A 1.041-Mb/mm227.38-TOPS/W Signed-INT8 Dynamic-Logic-Based ADC-less SRAM Compute-in-Memory Macro in 28nm with Reconfigurable Bitwise Operation for AI and Embedded Applications
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Yan, B; Hsu, JL; Yu, PC; Lee, CC; Zhang, Y; Yue, W; Mei, G; Yang, Y; Li, H; Chen, Y; Huang, R
Published in: Digest of Technical Papers IEEE International Solid State Circuits Conference
January 1, 2022
Advanced intelligent embedded systems perform cognitive tasks with highly-efficient vector-processing units for deep neural network (DNN) inference and other vector-based signal processing using limited power. SRAM-based compute-in-memory (CIM) achieves high energy efficiency for vector-matrix multiplications, offers <1ns read/write speed, and saves vastly repeating memory accesses. However, prior SRAM CIM macros require a large area for compute circuits (either using ADC for analog CIM [1- 4] or CMOS static logic for all-digital CIM [5-6]), have limited CIM functions, and use fixed vector-processing dimensions that cause a low-spatial-utilization rate when deploying DNN (Fig. 11.7.1).
Duke Scholars
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Digest of Technical Papers IEEE International Solid State Circuits Conference
DOI
ISSN
0193-6530
Publication Date
January 1, 2022
Volume
2022-February
Start / End Page
188 / 190
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Yan, B., Hsu, J. L., Yu, P. C., Lee, C. C., Zhang, Y., Yue, W., … Huang, R. (2022). A 1.041-Mb/mm227.38-TOPS/W Signed-INT8 Dynamic-Logic-Based ADC-less SRAM Compute-in-Memory Macro in 28nm with Reconfigurable Bitwise Operation for AI and Embedded Applications. In Digest of Technical Papers IEEE International Solid State Circuits Conference (Vol. 2022-February, pp. 188–190). https://doi.org/10.1109/ISSCC42614.2022.9731545
Yan, B., J. L. Hsu, P. C. Yu, C. C. Lee, Y. Zhang, W. Yue, G. Mei, et al. “A 1.041-Mb/mm227.38-TOPS/W Signed-INT8 Dynamic-Logic-Based ADC-less SRAM Compute-in-Memory Macro in 28nm with Reconfigurable Bitwise Operation for AI and Embedded Applications.” In Digest of Technical Papers IEEE International Solid State Circuits Conference, 2022-February:188–90, 2022. https://doi.org/10.1109/ISSCC42614.2022.9731545.
Yan B, Hsu JL, Yu PC, Lee CC, Zhang Y, Yue W, et al. A 1.041-Mb/mm227.38-TOPS/W Signed-INT8 Dynamic-Logic-Based ADC-less SRAM Compute-in-Memory Macro in 28nm with Reconfigurable Bitwise Operation for AI and Embedded Applications. In: Digest of Technical Papers IEEE International Solid State Circuits Conference. 2022. p. 188–90.
Yan, B., et al. “A 1.041-Mb/mm227.38-TOPS/W Signed-INT8 Dynamic-Logic-Based ADC-less SRAM Compute-in-Memory Macro in 28nm with Reconfigurable Bitwise Operation for AI and Embedded Applications.” Digest of Technical Papers IEEE International Solid State Circuits Conference, vol. 2022-February, 2022, pp. 188–90. Scopus, doi:10.1109/ISSCC42614.2022.9731545.
Yan B, Hsu JL, Yu PC, Lee CC, Zhang Y, Yue W, Mei G, Yang Y, Li H, Chen Y, Huang R. A 1.041-Mb/mm227.38-TOPS/W Signed-INT8 Dynamic-Logic-Based ADC-less SRAM Compute-in-Memory Macro in 28nm with Reconfigurable Bitwise Operation for AI and Embedded Applications. Digest of Technical Papers IEEE International Solid State Circuits Conference. 2022. p. 188–190.
Published In
Digest of Technical Papers IEEE International Solid State Circuits Conference
DOI
ISSN
0193-6530
Publication Date
January 1, 2022
Volume
2022-February
Start / End Page
188 / 190