Artificial Neuron using Ag/2D-MoS/Au Threshold Switching Memristor
The phenomenal evolution of information and communication drives future technologies towards highly parallel, energy-efficient self-learning systems like the human brain. The limitations of current von Neumann computation systems have paved the way for artificial neural networks (ANN) to meet these criteria. The memristor has become an emerging candidate to realize ANN through emulating biological synapse and neuron behavior [1]-[3]. We previously reported an artificial neuron with 2D Mos2 and graphene electrode, but the operating voltage was high, and the output current was low [4]. In this work, we harness threshold switching in Mos2 enabled by Ag electrode, to emulate integration and firing behavior of neuron and demonstrate digit recognition application with these devices. The simple vertical structure of Ag/MoS/ Au threshold switching memristor (TSM), with very low threshold voltage (\mathrm{V}-{\mathrm{t}\mathrm{h}}=0.4-0.5\mathrm{V}), displays the four crucial features of neuron all-or-nothing spiking, threshold-driven firing, post firing refractory period and stimulus strength based frequency response.
