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Tania Roy

Associate Professor of Electrical and Computer Engineering
Pierre R. Lamond Department of Electrical and Computer Engineering
Box 90291, Durham, NC 27708
101 Science Drive, 3469 Fitzpatrick CIEMAS, Durham, NC 27708

Overview


Roy's work focuses on developing hardware for artificial intelligence applications using novel functional materials including two-dimensional materials. By modeling computer architecture after the basic structure of synapses and neurons, hardware can be manufactured to be better adapted to pattern recognition algorithms. She also focuses on high-power electronics made with gallium nitride and other wide bandgap semiconductors. She is currently working on investigating the defects produced by ionizing radiation in GaN devices. She is particularly interested in studying the reliability of emerging devices and materials systems using electrical characterization techniques.

Current Duke Appointments & Affiliations


Associate Professor of Electrical and Computer Engineering · 2025 - Present Pierre R. Lamond Department of Electrical and Computer Engineering, Pratt School of Engineering

Recent News Items


Published August 8, 2025
Four Duke Scholars Honored With Langford Lectureship Award
Published January 11, 2024
Tania Roy Shares Her Love of Electrical Engineering with Her Students
Published July 25, 2023
Taming AI’s Outsized Appetite

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Recent Scholarly Works


Electrically Reconfigurable Floating Gate Optoelectronic Synaptic Pixels for In-sensor Convolutional Image Feature Extraction with Built-in Contrast Enhancement.

Journal article ACS nano · May 2026 Image feature extraction and enhancement are fundamental operations in real-time object detection using convolutional neural networks (CNNs). In conventional architectures, continuous data transfer between sensors, memory, and processing units leads to hig ... Full text Cite

Impact of Contact Gating on Scaling of Monolayer 2D Transistors Using a Symmetric Dual-Gate Structure.

Journal article ACS nano · March 2026 The performance and scalability of two-dimensional (2D) field-effect transistors (FETs) are strongly influenced by geometry-defined electrostatics. In most 2D FET studies, the gate overlaps with the source/drain electrodes, allowing the gate potential to m ... Full text Cite

Long-Term Operational Stability of Dual-Gated ITO/HfO<sub>2</sub> Field-Effect Transistors via Full Top-Gate Coverage: A Comprehensive Bias-Stress Mapping.

Journal article ACS nano · March 2026 Indium tin oxide (ITO) is a promising thin-film semiconductor which could be used in back-end-of-line compatible field-effect transistors (FETs) produced by using monolithic 3D integration. However, these targets cannot be reached without making high-quali ... Full text Cite
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Recent Grants


Optoelectronic Synapse-based Physical Reservoir Imager (OSPRI)

ResearchPrincipal Investigator · Awarded by LAB2701, LLC · 2025 - 2027

Co-designed Systems for In-sensor Processing with Sustainable Nanomaterials (COSMIC)

ResearchPrincipal Investigator · Awarded by National Science Foundation · 2023 - 2027

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Education


Vanderbilt University · 2011 Ph.D.
Vanderbilt University · 2008 M.S.

External Links


Roy Lab