Tania Roy | Scholars@Duke

Tania Roy
Assistant Professor of Electrical and Computer Engineering

Roy's work focuses on developing hardware for artificial intelligence applications using novel functional materials including two-dimensional materials. By modeling computer architecture after the basic structure of synapses and neurons, hardware can be manufactured to be better adapted to pattern recognition algorithms. She also focuses on high-power electronics made with gallium nitride and other wide bandgap semiconductors. She is currently working on investigating the defects produced by ionizing radiation in GaN devices. She is particularly interested in studying the reliability of emerging devices and materials systems using electrical characterization techniques.

Current Research Interests

Energy-efficient electronics
Two-dimensional materials
Neuromorphic Computing
Optoelectronics
Wide bandgap materials
High power electronics
Radiation effects and reliability

Current Appointments & Affiliations

Assistant Professor of Electrical and Computer Engineering, Electrical and Computer Engineering, Pratt School of Engineering 2023

Contact Information

101 Science Drive, 3469 Fitzpatrick CIEMAS, Durham, NC 27708
Box 90291, Durham, NC 27708
tania.roy@duke.edu (919) 660-4215
Roy Lab

Background
Education, Training, & Certifications
- Ph.D., Vanderbilt University 2008
Previous Appointments & Affiliations
- Visiting Assistant Professor in the Department of Electrical and Computer Engineering, Electrical and Computer Engineering, Pratt School of Engineering 2022
Academic Positions Outside Duke
- Assistant Professor, University of Central Florida. 2016 - 2022
- Postdoctoral Scholar, University of California, Berkeley. 2014 - 2016
- Postdoctoral Fellow, Georgia Institute of Technology. 2011 - 2013
Recognition
In the News
- NOV 20, 2022 Pratt School of Engineering
  
  Tania Roy: Building High-Energy Space Electronics and Brain-Like AI Hardware
- JUN 21, 2022 Duke Engineering News
  
  Tania Roy: Building High-Energy Space Electronics and Brain-Like AI Hardware
Expertise
Subject Headings
Research
Selected Grants
- CAREER: Scalable monolithic integration of Graphene/MoS2/Graphene artificial neurons and synapses for accelerated machine learning awarded by National Science Foundation 2023 - 2024
External Relationships
- University of Central Florida
Publications & Artistic Works
Selected Publications
- Academic Articles
  - Krishnaprasad, A., D. Dev, M. S. Shawkat, R. Martinez-Martinez, M. M. Islam, H. S. Chung, T. S. Bae, Y. Jung, and T. Roy. “Graphene/MoS2/SiOx memristive synapses for linear weight update (Accepted).” Npj 2d Materials and Applications 7, no. 1 (December 1, 2023). https://doi.org/10.1038/s41699-023-00388-y.
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  - Islam, Molla Manjurul, Adithi Krishnaprasad, Durjoy Dev, Ricardo Martinez-Martinez, Victor Okonkwo, Benjamin Wu, Sang Sub Han, et al. “Multiwavelength Optoelectronic Synapse with 2D Materials for Mixed-Color Pattern Recognition.” Acs Nano 16, no. 7 (July 2022): 10188–98. https://doi.org/10.1021/acsnano.2c01035.
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  - Yoo, C., T. J. Ko, M. G. Kaium, R. Martinez, M. M. Islam, H. Li, J. H. Kim, et al. “A minireview on 2D materials-enabled optoelectronic artificial synaptic devices.” Apl Materials 10, no. 7 (July 1, 2022). https://doi.org/10.1063/5.0096053.
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  - Martinez-Martinez, Ricardo, Molla Manjurul Islam, Adithi Krishnaprasad, and Tania Roy. “Graphene-oxide interface for optoelectronic synapse application.” Scientific Reports 12, no. 1 (April 2022): 5880. https://doi.org/10.1038/s41598-022-09873-8.
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  - Krishnaprasad, Adithi, Durjoy Dev, Sang Sub Han, Yaqing Shen, Hee-Suk Chung, Tae-Sung Bae, Changhyeon Yoo, Yeonwoong Jung, Mario Lanza, and Tania Roy. “MoS₂ Synapses with Ultra-low Variability and Their Implementation in Boolean Logic.” Acs Nano 16, no. 2 (February 2022): 2866–76. https://doi.org/10.1021/acsnano.1c09904.
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  - Park, Jinho, Pavlo Kravchuk, Adithi Krishnaprasad, Tania Roy, and Ellen Hyeran Kang. “Graphene Enhances Actin Filament Assembly Kinetics and Modulates NIH-3T3 Fibroblast Cell Spreading.” International Journal of Molecular Sciences 23, no. 1 (January 2022): 509. https://doi.org/10.3390/ijms23010509.
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  - Reddy, L. H., S. R. Pande, T. Roy, E. M. Vogel, A. Chakravorty, and B. Chakrabarti. “A SPICE compact model for forming-free, low-power graphene-insulator-graphene ReRAM technology.” Emergent Materials 4, no. 4 (August 1, 2021): 1055–65. https://doi.org/10.1007/s42247-021-00265-8.
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  - Ganesan, J. P., D. Dev, A. Krishnaprasad, C. Feit, D. Moser, R. K. Kanjolia, T. Roy, and P. Banerjee. “Semiconductor-to-metal transition in atomic layer deposition (ALD) of VO2 films using VCl4 and water.” Applied Physics Letters 118, no. 26 (June 28, 2021). https://doi.org/10.1063/5.0053566.
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  - Shawkat, Mashiyat Sumaiya, Shihab Bin Hafiz, Molla Manjurul Islam, Sohrab Alex Mofid, Mohammad M. Al Mahfuz, Aritra Biswas, Hee-Suk Chung, et al. “Scalable Van der Waals Two-Dimensional PtTe₂ Layers Integrated onto Silicon for Efficient Near-to-Mid Infrared Photodetection.” Acs Applied Materials & Interfaces 13, no. 13 (April 2021): 15542–50. https://doi.org/10.1021/acsami.1c03512.
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  - Li, J., P. Dwivedi, K. S. Kumar, T. Roy, K. E. Crawford, and J. Thomas. “Growing Perovskite Quantum Dots on Carbon Nanotubes for Neuromorphic Optoelectronic Computing.” Advanced Electronic Materials 7, no. 1 (January 1, 2021). https://doi.org/10.1002/aelm.202000535.
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  - Islam, Molla Manjurul, Durjoy Dev, Adithi Krishnaprasad, Laurene Tetard, and Tania Roy. “Optoelectronic synapse using monolayer MoS₂ field effect transistors.” Scientific Reports 10, no. 1 (December 2020): 21870. https://doi.org/10.1038/s41598-020-78767-4.
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  - Ko, T. J., H. Li, S. A. Mofid, C. Yoo, E. Okogbue, S. S. Han, M. S. Shawkat, et al. “Two-Dimensional Near-Atom-Thickness Materials for Emerging Neuromorphic Devices and Applications.” Iscience 23, no. 11 (November 20, 2020). https://doi.org/10.1016/j.isci.2020.101676.
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  - Dev, D., M. S. Shawkat, A. Krishnaprasad, Y. Jung, and T. Roy. “Artificial Nociceptor Using 2D MoS2Threshold Switching Memristor.” Ieee Electron Device Letters 41, no. 9 (September 1, 2020): 1440–43. https://doi.org/10.1109/LED.2020.3012831.
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  - Dev, D., A. Krishnaprasad, M. S. Shawkat, Z. He, S. Das, D. Fan, H. S. Chung, Y. Jung, and T. Roy. “2D MoS2-Based Threshold Switching Memristor for Artificial Neuron.” Ieee Electron Device Letters 41, no. 6 (June 1, 2020): 936–39. https://doi.org/10.1109/LED.2020.2988247.
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  - Shawkat, Mashiyat Sumaiya, Jaeyoung Gil, Sang Sub Han, Tae-Jun Ko, Mengjing Wang, Durjoy Dev, Junyoung Kwon, et al. “Thickness-Independent Semiconducting-to-Metallic Conversion in Wafer-Scale Two-Dimensional PtSe2 Layers by Plasma-Driven Chalcogen Defect Engineering.” Acs Applied Materials & Interfaces 12, no. 12 (March 2020): 14341–51. https://doi.org/10.1021/acsami.0c00116.
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  - Pradhan, Basudev, Sonali Das, Jinxin Li, Farzana Chowdhury, Jayesh Cherusseri, Deepak Pandey, Durjoy Dev, et al. “Ultrasensitive and ultrathin phototransistors and photonic synapses using perovskite quantum dots grown from graphene lattice.” Science Advances 6, no. 7 (February 2020): eaay5225. https://doi.org/10.1126/sciadv.aay5225.
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  - Krishnaprasad, A., N. Choudhary, S. Das, D. Dev, H. Kalita, H. S. Chung, O. Aina, Y. Jung, and T. Roy. “Electronic synapses with near-linear weight update using MoS2/graphene memristors.” Applied Physics Letters 115, no. 10 (September 2, 2019). https://doi.org/10.1063/1.5108899.
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  - Shawkat, Mashiyat Sumaiya, Hee-Suk Chung, Durjoy Dev, Sonali Das, Tania Roy, and Yeonwoong Jung. “Two-Dimensional/Three-Dimensional Schottky Junction Photovoltaic Devices Realized by the Direct CVD Growth of vdW 2D PtSe₂ Layers on Silicon.” Acs Applied Materials & Interfaces 11, no. 30 (July 2019): 27251–58. https://doi.org/10.1021/acsami.9b09000.
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  - Wang, P., H. Kalita, A. Krishnaprasad, D. Dev, A. O’hara, R. Jiang, E. Zhang, et al. “Total-Ionizing-Dose Response of MoS2 Transistors With ZrO2 and h-BN Gate Dielectrics.” Ieee Transactions on Nuclear Science 66, no. 7 (July 1, 2019): 1584–91. https://doi.org/10.1109/TNS.2018.2885751.
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  - Roy, T. “Scaled dielectrics for scaled devices.” Nature Electronics 2, no. 6 (June 1, 2019): 213–14. https://doi.org/10.1038/s41928-019-0261-y.
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  - Cherusseri, Jayesh, Kowsik Sambath Kumar, Nitin Choudhary, Narasimha Nagaiah, Yeonwoong Jung, Tania Roy, and Jayan Thomas. “Novel mesoporous electrode materials for symmetric, asymmetric and hybrid supercapacitors.” Nanotechnology 30, no. 20 (May 2019): 202001. https://doi.org/10.1088/1361-6528/ab0685.
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  - Das, S., M. J. Hossain, S. F. Leung, A. Lenox, Y. Jung, K. Davis, J. H. He, and T. Roy. “A leaf-inspired photon management scheme using optically tuned bilayer nanoparticles for ultra-thin and highly efficient photovoltaic devices.” Nano Energy 58 (April 1, 2019): 47–56. https://doi.org/10.1016/j.nanoen.2018.12.072.
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  - Das, Sonali, Deepak Pandey, Jayan Thomas, and Tania Roy. “The Role of Graphene and Other 2D Materials in Solar Photovoltaics.” Advanced Materials (Deerfield Beach, Fla.) 31, no. 1 (January 2019): e1802722. https://doi.org/10.1002/adma.201802722.
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  - Kalita, Hirokjyoti, Adithi Krishnaprasad, Nitin Choudhary, Sonali Das, Durjoy Dev, Yi Ding, Laurene Tetard, Hee-Suk Chung, Yeonwoong Jung, and Tania Roy. “Artificial Neuron using Vertical MoS₂/Graphene Threshold Switching Memristors.” Scientific Reports 9, no. 1 (January 2019): 53. https://doi.org/10.1038/s41598-018-35828-z.
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  - Withanage, Sajeevi S., Hirokjyoti Kalita, Hee-Suk Chung, Tania Roy, Yeonwoong Jung, and Saiful I. Khondaker. “Uniform Vapor-Pressure-Based Chemical Vapor Deposition Growth of MoS₂ Using MoO₃ Thin Film as a Precursor for Coevaporation.” Acs Omega 3, no. 12 (December 2018): 18943–49. https://doi.org/10.1021/acsomega.8b02978.
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  - Okogbue, Emmanuel, Jung Han Kim, Tae-Jun Ko, Hee-Suk Chung, Adithi Krishnaprasad, Jean Calderon Flores, Shraddha Nehate, et al. “Centimeter-Scale Periodically Corrugated Few-Layer 2D MoS₂ with Tensile Stretch-Driven Tunable Multifunctionalities.” Acs Applied Materials & Interfaces 10, no. 36 (September 2018): 30623–30. https://doi.org/10.1021/acsami.8b08178.
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  - Dev, D., A. Krishnaprasad, H. Kalita, S. Das, V. Rodriguez, J. Calderon Flores, L. Zhai, and T. Roy. “High quality gate dielectric/MoS2 interfaces probed by the conductance method.” Applied Physics Letters 112, no. 23 (June 4, 2018). https://doi.org/10.1063/1.5028404.
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  - Islam, Md Ashraful, Jung Han Kim, Anthony Schropp, Hirokjyoti Kalita, Nitin Choudhary, Dylan Weitzman, Saiful I. Khondaker, et al. “Centimeter-Scale 2D van der Waals Vertical Heterostructures Integrated on Deformable Substrates Enabled by Gold Sacrificial Layer-Assisted Growth.” Nano Letters 17, no. 10 (October 2017): 6157–65. https://doi.org/10.1021/acs.nanolett.7b02776.
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  - Tosun, M., L. Chan, M. Amani, T. Roy, G. H. Ahn, P. Taheri, C. Carraro, J. W. Ager, R. Maboudian, and A. Javey. “Air-Stable n-Doping of WSe2 by Anion Vacancy Formation with Mild Plasma Treatment.” Acs Nano 10, no. 7 (July 26, 2016): 6853–60. https://doi.org/10.1021/acsnano.6b02521.
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  - Roy, T., M. Tosun, M. Hettick, G. H. Ahn, C. Hu, and A. Javey. “2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures.” Applied Physics Letters 108, no. 8 (February 22, 2016). https://doi.org/10.1063/1.4942647.
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  - Roy, T., M. Tosun, X. Cao, H. Fang, D. H. Lien, P. Zhao, Y. Z. Chen, Y. L. Chueh, J. Guo, and A. Javey. “Dual-gated MoS2/WSe2van der Waals tunnel diodes and transistors.” Acs Nano 9, no. 2 (February 24, 2015): 2071–79. https://doi.org/10.1021/nn507278b.
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  - Lien, D. H., J. S. Kang, M. Amani, K. Chen, M. Tosun, H. P. Wang, T. Roy, et al. “Engineering light outcoupling in 2D materials.” Nano Letters 15, no. 2 (February 11, 2015): 1356–61. https://doi.org/10.1021/nl504632u.
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  - Roy, T., M. Tosun, J. S. Kang, A. B. Sachid, S. B. Desai, M. Hettick, C. C. Hu, and A. Javey. “Field-effect transistors built from all two-dimensional material components.” Acs Nano 8, no. 6 (June 24, 2014): 6259–64. https://doi.org/10.1021/nn501723y.
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  - Joiner, C. A., T. Roy, Z. R. Hesabi, B. Chakrabarti, and E. M. Vogel. “Cleaning graphene with a titanium sacrificial layer.” Applied Physics Letters 104, no. 22 (June 2, 2014). https://doi.org/10.1063/1.4881886.
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  - Roy, T., L. Liu, S. De La Barrera, B. Chakrabarti, Z. R. Hesabi, C. A. Joiner, R. M. Feenstra, G. Gu, and E. M. Vogel. “Tunneling characteristics in chemical vapor deposited graphene-hexagonal boron nitride-graphene junctions.” Applied Physics Letters 104, no. 12 (March 24, 2014). https://doi.org/10.1063/1.4870073.
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  - Chakrabarti, B., T. Roy, and E. M. Vogel. “Nonlinear switching with ultralow reset power in graphene-insulator- graphene forming-free resistive memories.” Ieee Electron Device Letters 35, no. 7 (January 1, 2014): 750–52. https://doi.org/10.1109/LED.2014.2321328.
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  - Puzyrev, Y., S. Mukherjee, J. Chen, T. Roy, M. Silvestri, R. D. Schrimpf, D. M. Fleetwood, et al. “Gate bias dependence of defect-mediated hot-carrier degradation in GaN HEMTs.” Ieee Transactions on Electron Devices 61, no. 5 (January 1, 2014): 1316–20. https://doi.org/10.1109/TED.2014.2309278.
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  - Zhang, C. X., X. Shen, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. A. Francis, T. Roy, S. Dhar, S. H. Ryu, and S. T. Pantelides. “Temperature dependence and postirradiation annealing response of the 1/f noise of 4H-SiC MOSFETs.” Ieee Transactions on Electron Devices 60, no. 7 (July 15, 2013): 2361–67. https://doi.org/10.1109/TED.2013.2263426.
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  - Roy, T., Z. R. Hesabi, C. A. Joiner, A. Fujimoto, and E. M. Vogel. “Barrier engineering for double layer CVD graphene tunnel FETs.” Microelectronic Engineering 109 (May 1, 2013): 117–19. https://doi.org/10.1016/j.mee.2013.02.090.
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  - Warnick, K. H., Y. Puzyrev, T. Roy, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides. “Room-temperature diffusive phenomena in semiconductors: The case of AlGaN.” Physical Review B Condensed Matter and Materials Physics 84, no. 21 (December 20, 2011). https://doi.org/10.1103/PhysRevB.84.214109.
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  - Roy, T., E. X. Zhang, Y. S. Puzyrev, X. Shen, D. M. Fleetwood, R. D. Schrimpf, G. Koblmueller, et al. “Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors.” Applied Physics Letters 99, no. 20 (November 14, 2011). https://doi.org/10.1063/1.3662041.
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  - Puzyrev, Y. S., T. Roy, M. Beck, B. R. Tuttle, R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides. “Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors.” Journal of Applied Physics 109, no. 3 (February 1, 2011). https://doi.org/10.1063/1.3524185.
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  - Roy, T., Y. S. Puzyrev, B. R. Tuttle, D. M. Fleetwood, R. D. Schrimpf, D. F. Brown, U. K. Mishra, and S. T. Pantelides. “Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions.” Applied Physics Letters 96, no. 13 (April 12, 2010). https://doi.org/10.1063/1.3377004.
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- Book Sections
  - Das, S., and T. Roy. “CHAPTER 12: Ambipolar Inorganic Two-dimensional Materials for Solar Cells.” In RSC Smart Materials, 2021-January:256–97, 2021. https://doi.org/10.1039/9781788019279-00256.
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- Conference Papers
  - Aina, L., C. Hahn, C. Wallace, M. M. Islam, V. Okonkwo, and T. Roy. “The Artificial Intelligent Pixel (aiPixel).” In Proceedings of Spie the International Society for Optical Engineering, Vol. 12019, 2022. https://doi.org/10.1117/12.2610301.
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  - Dev, D., A. Krishnaprasad, Z. He, S. Das, M. S. Shawkat, M. Manley, O. Aina, D. Fan, Y. Jung, and T. Roy. “Artificial Neuron using Ag/2D-MoS/Au Threshold Switching Memristor.” In Device Research Conference Conference Digest, Drc, 2019-June:193–94, 2019. https://doi.org/10.1109/DRC46940.2019.9046335.
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  - Krishnaprasad, A., S. Das, N. Choudhary, D. Dev, H. S. Chung, O. Aina, Y. Jung, and T. Roy. “Linear Weight Update in MoS/Graphene Memristive Synapses for Unsupervised Learning.” In Device Research Conference Conference Digest, Drc, 2019-June:79–80, 2019. https://doi.org/10.1109/DRC46940.2019.9046458.
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  - Kalita, H., A. Krishnaprasad, N. Choudhary, S. Das, H. S. Chung, Y. Jung, and T. Roy. “Artificial Neuron using MoS2/graphene threshold switching memristors.” In Device Research Conference Conference Digest, Drc, Vol. 2018-June, 2018. https://doi.org/10.1109/DRC.2018.8443301.
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  - Zhao, P., S. Desai, M. Tosun, T. Roy, H. Fang, A. Sachid, M. Amani, C. Hu, and A. Javey. “2D layered materials: From materials properties to device applications.” In Technical Digest International Electron Devices Meeting, Iedm, 2016-February:27.3.1-27.3.4, 2015. https://doi.org/10.1109/IEDM.2015.7409780.
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  - Chakrabarti, B., T. Roy, C. A. Joiner, Z. R. Hesabi, and E. M. Vogel. “Forming-free resistive switching with low current operation in graphene-insulator-graphene structures.” In Device Research Conference Conference Digest, Drc, 55–56, 2013. https://doi.org/10.1109/DRC.2013.6633790.
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  - Roy, T., C. Joiner, Z. Razavi, and E. M. Vogel. “Integration and characterization of graphene-insulator-graphene junctions.” In Ecs Transactions, 53:63–69, 2013. https://doi.org/10.1149/05301.0063ecst.
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  - Fleetwood, D. M., T. Roy, X. Shen, Y. S. Puzyrev, E. X. Zhang, R. D. Schrimpf, and S. T. Pantelides. “Oxygen-related border traps in MOS and GaN devices.” In Icsict 2012 2012 Ieee 11th International Conference on Solid State and Integrated Circuit Technology, Proceedings, 2012. https://doi.org/10.1109/ICSICT.2012.6467598.
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  - Pantelides, S. T., Y. Puzyrev, X. Shen, T. Roy, S. Dasgupta, B. R. Tuttle, D. M. Fleetwood, and R. D. Schrimpf. “Reliability of III-V devices - The defects that cause the trouble.” In Microelectronic Engineering, 90:3–8, 2012. https://doi.org/10.1016/j.mee.2011.04.019.
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  - Puzyrev, Y. S., T. Roy, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides. “Radiation-induced defect evolution and electrical degradation of AlGaN/GaN high-electron-mobility transistors.” In Ieee Transactions on Nuclear Science, 58:2918–24, 2011. https://doi.org/10.1109/TNS.2011.2170433.
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  - Roy, T., E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, Y. S. Puzyrev, and S. T. Pantelides. “Reliability-limiting defects in AlGaN/GaN HEMTs.” In Ieee International Reliability Physics Symposium Proceedings, 2011. https://doi.org/10.1109/IRPS.2011.5784512.
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  - Roy, T., Y. S. Puzyrev, E. X. Zhang, S. Dasgupta, S. A. Francis, D. M. Fleetwood, R. D. Schrimpf, U. K. Mishra, J. S. Speck, and S. T. Pantelides. “1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions.” In Microelectronics Reliability, 51:212–16, 2011. https://doi.org/10.1016/j.microrel.2010.09.022.
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  - Roy, T., E. X. Zhang, Y. S. Puzyrev, D. M. Fleetwood, R. D. Schrimpf, B. K. Choi, A. B. Hmelo, and S. T. Pantelides. “Process dependence of proton-induced degradation in GaN HEMTs.” In Ieee Transactions on Nuclear Science, 57:3060–65, 2010. https://doi.org/10.1109/TNS.2010.2073720.
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  - Roy, T., A. F. Witulski, R. D. Schrimpf, M. L. Alles, and L. W. Massengill. “Single event mechanisms in 90 nm triple-well CMOS devices.” In Ieee Transactions on Nuclear Science, 55:2948–56, 2008. https://doi.org/10.1109/TNS.2008.2005831.
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Teaching & Mentoring
Recent Courses
- ECE 526: Semiconductor Devices for Integrated Circuits 2023

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Education, Training, & Certifications

Previous Appointments & Affiliations

Academic Positions Outside Duke

In the News

Subject Headings

Selected Grants

External Relationships

Selected Publications

Academic Articles

Book Sections

Conference Papers

Recent Courses