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Tunneling characteristics in chemical vapor deposited graphene-hexagonal boron nitride-graphene junctions

Publication ,  Journal Article
Roy, T; Liu, L; De La Barrera, S; Chakrabarti, B; Hesabi, ZR; Joiner, CA; Feenstra, RM; Gu, G; Vogel, EM
Published in: Applied Physics Letters
March 24, 2014

Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate graphene-hexagonal boron nitride-graphene symmetric field effect transistors. Gate control of the tunneling characteristics is observed similar to previously reported results for exfoliated graphene-hexagonal boron nitride-graphene devices. Density-of-states features are observed in the tunneling characteristics of the devices, although without large resonant peaks that would arise from lateral momentum conservation. The lack of distinct resonant behavior is attributed to disorder in the devices, and a possible source of the disorder is discussed. © 2014 AIP Publishing LLC.

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Published In

Applied Physics Letters

DOI

ISSN

0003-6951

Publication Date

March 24, 2014

Volume

104

Issue

12

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences
 

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Roy, T., Liu, L., De La Barrera, S., Chakrabarti, B., Hesabi, Z. R., Joiner, C. A., … Vogel, E. M. (2014). Tunneling characteristics in chemical vapor deposited graphene-hexagonal boron nitride-graphene junctions. Applied Physics Letters, 104(12). https://doi.org/10.1063/1.4870073
Roy, T., L. Liu, S. De La Barrera, B. Chakrabarti, Z. R. Hesabi, C. A. Joiner, R. M. Feenstra, G. Gu, and E. M. Vogel. “Tunneling characteristics in chemical vapor deposited graphene-hexagonal boron nitride-graphene junctions.” Applied Physics Letters 104, no. 12 (March 24, 2014). https://doi.org/10.1063/1.4870073.
Roy T, Liu L, De La Barrera S, Chakrabarti B, Hesabi ZR, Joiner CA, et al. Tunneling characteristics in chemical vapor deposited graphene-hexagonal boron nitride-graphene junctions. Applied Physics Letters. 2014 Mar 24;104(12).
Roy, T., et al. “Tunneling characteristics in chemical vapor deposited graphene-hexagonal boron nitride-graphene junctions.” Applied Physics Letters, vol. 104, no. 12, Mar. 2014. Scopus, doi:10.1063/1.4870073.
Roy T, Liu L, De La Barrera S, Chakrabarti B, Hesabi ZR, Joiner CA, Feenstra RM, Gu G, Vogel EM. Tunneling characteristics in chemical vapor deposited graphene-hexagonal boron nitride-graphene junctions. Applied Physics Letters. 2014 Mar 24;104(12).

Published In

Applied Physics Letters

DOI

ISSN

0003-6951

Publication Date

March 24, 2014

Volume

104

Issue

12

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences