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Reliability of III-V devices - The defects that cause the trouble

Publication ,  Conference
Pantelides, ST; Puzyrev, Y; Shen, X; Roy, T; Dasgupta, S; Tuttle, BR; Fleetwood, DM; Schrimpf, RD
Published in: Microelectronic Engineering
February 1, 2012

Degradation of electronic devices by hot electrons is universally attributed to the generation of defects, but the mechanisms for defect generation and the specific nature of the pertinent defects are not known for most systems. Here we describe three recent case studies in III-V high-electron-mobility transistors that illustrate the power of combining density functional calculations and experimental data to identify the pertinent defects and associated degradation mechanisms. In all cases, benign pre-existing defects are either depassivated (irreversible degradation) or transformed to a metastable state (reversible degradation). © 2011 Elsevier B.V. All rights reserved.

Duke Scholars

Published In

Microelectronic Engineering

DOI

ISSN

0167-9317

Publication Date

February 1, 2012

Volume

90

Start / End Page

3 / 8

Related Subject Headings

  • Applied Physics
  • 4016 Materials engineering
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering
  • 0299 Other Physical Sciences
  • 0204 Condensed Matter Physics
 

Citation

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Pantelides, S. T., Puzyrev, Y., Shen, X., Roy, T., Dasgupta, S., Tuttle, B. R., … Schrimpf, R. D. (2012). Reliability of III-V devices - The defects that cause the trouble. In Microelectronic Engineering (Vol. 90, pp. 3–8). https://doi.org/10.1016/j.mee.2011.04.019
Pantelides, S. T., Y. Puzyrev, X. Shen, T. Roy, S. Dasgupta, B. R. Tuttle, D. M. Fleetwood, and R. D. Schrimpf. “Reliability of III-V devices - The defects that cause the trouble.” In Microelectronic Engineering, 90:3–8, 2012. https://doi.org/10.1016/j.mee.2011.04.019.
Pantelides ST, Puzyrev Y, Shen X, Roy T, Dasgupta S, Tuttle BR, et al. Reliability of III-V devices - The defects that cause the trouble. In: Microelectronic Engineering. 2012. p. 3–8.
Pantelides, S. T., et al. “Reliability of III-V devices - The defects that cause the trouble.” Microelectronic Engineering, vol. 90, 2012, pp. 3–8. Scopus, doi:10.1016/j.mee.2011.04.019.
Pantelides ST, Puzyrev Y, Shen X, Roy T, Dasgupta S, Tuttle BR, Fleetwood DM, Schrimpf RD. Reliability of III-V devices - The defects that cause the trouble. Microelectronic Engineering. 2012. p. 3–8.
Journal cover image

Published In

Microelectronic Engineering

DOI

ISSN

0167-9317

Publication Date

February 1, 2012

Volume

90

Start / End Page

3 / 8

Related Subject Headings

  • Applied Physics
  • 4016 Materials engineering
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering
  • 0299 Other Physical Sciences
  • 0204 Condensed Matter Physics