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Process dependence of proton-induced degradation in GaN HEMTs

Publication ,  Conference
Roy, T; Zhang, EX; Puzyrev, YS; Fleetwood, DM; Schrimpf, RD; Choi, BK; Hmelo, AB; Pantelides, ST
Published in: IEEE Transactions on Nuclear Science
December 1, 2010
Published version (DOI)

The 1.8-MeV proton radiation responses are compared for AlGaN/GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions. The NH 3-rich devices are more susceptible to proton irradiation than the Ga-rich and N-rich devices. The 1/f noise of the devices increases with increasing fluence. Density functional theory calculations show that N vacancies and Ga-N divacancies lead to enhanced noise in these devices. © 2010 IEEE.

Duke Scholars

Tania Roy
Author Tania Roy Electrical and Computer Engineering

Published In

IEEE Transactions on Nuclear Science

DOI

10.1109/TNS.2010.2073720

ISSN

0018-9499

Publication Date

December 1, 2010

Volume

57

Issue

6 PART 1

Start / End Page

3060 / 3065

Related Subject Headings

  • Nuclear & Particles Physics
  • 5106 Nuclear and plasma physics
  • 0903 Biomedical Engineering
  • 0299 Other Physical Sciences
  • 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics
 

Citation

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Roy, T., Zhang, E. X., Puzyrev, Y. S., Fleetwood, D. M., Schrimpf, R. D., Choi, B. K., … Pantelides, S. T. (2010). Process dependence of proton-induced degradation in GaN HEMTs. In IEEE Transactions on Nuclear Science (Vol. 57, pp. 3060–3065). https://doi.org/10.1109/TNS.2010.2073720
Roy, T., E. X. Zhang, Y. S. Puzyrev, D. M. Fleetwood, R. D. Schrimpf, B. K. Choi, A. B. Hmelo, and S. T. Pantelides. “Process dependence of proton-induced degradation in GaN HEMTs.” In IEEE Transactions on Nuclear Science, 57:3060–65, 2010. https://doi.org/10.1109/TNS.2010.2073720.
Roy T, Zhang EX, Puzyrev YS, Fleetwood DM, Schrimpf RD, Choi BK, et al. Process dependence of proton-induced degradation in GaN HEMTs. In: IEEE Transactions on Nuclear Science. 2010. p. 3060–5.
Roy, T., et al. “Process dependence of proton-induced degradation in GaN HEMTs.” IEEE Transactions on Nuclear Science, vol. 57, no. 6 PART 1, 2010, pp. 3060–65. Scopus, doi:10.1109/TNS.2010.2073720.
Roy T, Zhang EX, Puzyrev YS, Fleetwood DM, Schrimpf RD, Choi BK, Hmelo AB, Pantelides ST. Process dependence of proton-induced degradation in GaN HEMTs. IEEE Transactions on Nuclear Science. 2010. p. 3060–3065.

Published In

IEEE Transactions on Nuclear Science

DOI

10.1109/TNS.2010.2073720

ISSN

0018-9499

Publication Date

December 1, 2010

Volume

57

Issue

6 PART 1

Start / End Page

3060 / 3065

Related Subject Headings

  • Nuclear & Particles Physics
  • 5106 Nuclear and plasma physics
  • 0903 Biomedical Engineering
  • 0299 Other Physical Sciences
  • 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics