Reliability-limiting defects in AlGaN/GaN HEMTs
Publication
, Conference
Roy, T; Zhang, EX; Fleetwood, DM; Schrimpf, RD; Puzyrev, YS; Pantelides, ST
Published in: IEEE International Reliability Physics Symposium Proceedings
June 23, 2011
Low-frequency noise measurements and density functional theory calculations are combined to show that N-anti-site and C impurity defects can lead to changes in the low frequency noise of GaN/AlGaN HEMTs fabricated with three typical process conditions. Implications for device reliability are discussed. © 2011 IEEE.
Duke Scholars
Published In
IEEE International Reliability Physics Symposium Proceedings
DOI
ISSN
1541-7026
ISBN
9781424491117
Publication Date
June 23, 2011
Citation
APA
Chicago
ICMJE
MLA
NLM
Roy, T., Zhang, E. X., Fleetwood, D. M., Schrimpf, R. D., Puzyrev, Y. S., & Pantelides, S. T. (2011). Reliability-limiting defects in AlGaN/GaN HEMTs. In IEEE International Reliability Physics Symposium Proceedings. https://doi.org/10.1109/IRPS.2011.5784512
Roy, T., E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, Y. S. Puzyrev, and S. T. Pantelides. “Reliability-limiting defects in AlGaN/GaN HEMTs.” In IEEE International Reliability Physics Symposium Proceedings, 2011. https://doi.org/10.1109/IRPS.2011.5784512.
Roy T, Zhang EX, Fleetwood DM, Schrimpf RD, Puzyrev YS, Pantelides ST. Reliability-limiting defects in AlGaN/GaN HEMTs. In: IEEE International Reliability Physics Symposium Proceedings. 2011.
Roy, T., et al. “Reliability-limiting defects in AlGaN/GaN HEMTs.” IEEE International Reliability Physics Symposium Proceedings, 2011. Scopus, doi:10.1109/IRPS.2011.5784512.
Roy T, Zhang EX, Fleetwood DM, Schrimpf RD, Puzyrev YS, Pantelides ST. Reliability-limiting defects in AlGaN/GaN HEMTs. IEEE International Reliability Physics Symposium Proceedings. 2011.
Published In
IEEE International Reliability Physics Symposium Proceedings
DOI
ISSN
1541-7026
ISBN
9781424491117
Publication Date
June 23, 2011