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Can High-Temperature PBTI Testing Predict Dual-Gated ITO FET Long-term Reliability?

Publication ,  Conference
Rahman, MS; Matthews, D; Zhang, B; Hishe, HF; Villena, MA; Chen, J; Chopra, A; Chauhan, S; Fernando, A; Thareja, G; Roy, T
Published in: Technical Digest International Electron Devices Meeting Iedm
January 1, 2025
Published version (DOI)

We study positive bias temperature instability (PBTI) in a dual-gated (DG) indium tin oxide (ITO) FET at room temperature (RT), 85°C and 125°C. We report record low threshold voltage shift, ΔVth~ -37.8 mV for top gate stress (2V) at 125°C. At higher temperatures, ΔVth is reduced and Vth recovery is slower than at RT under identical stress. Simulations show elevated temperatures anneal shallow traps and activate deep-level traps, but these effects are temporary. These observations question the validity of elevated temperature accelerated reliability testing for ITO transistors, as it may not reflect long-term AOS device instability.

Duke Scholars

Tania Roy
Author Tania Roy Pierre R. Lamond Department of Electrical and Computer Engin ...

Published In

Technical Digest International Electron Devices Meeting Iedm

DOI

10.1109/IEDM50572.2025.11353802

ISSN

0163-1918

Publication Date

January 1, 2025
 

Citation

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Rahman, M. S., Matthews, D., Zhang, B., Hishe, H. F., Villena, M. A., Chen, J., … Roy, T. (2025). Can High-Temperature PBTI Testing Predict Dual-Gated ITO FET Long-term Reliability? In Technical Digest International Electron Devices Meeting Iedm. https://doi.org/10.1109/IEDM50572.2025.11353802
Rahman, M. S., D. Matthews, B. Zhang, H. F. Hishe, M. A. Villena, J. Chen, A. Chopra, et al. “Can High-Temperature PBTI Testing Predict Dual-Gated ITO FET Long-term Reliability?” In Technical Digest International Electron Devices Meeting Iedm, 2025. https://doi.org/10.1109/IEDM50572.2025.11353802.
Rahman MS, Matthews D, Zhang B, Hishe HF, Villena MA, Chen J, et al. Can High-Temperature PBTI Testing Predict Dual-Gated ITO FET Long-term Reliability? In: Technical Digest International Electron Devices Meeting Iedm. 2025.
Rahman, M. S., et al. “Can High-Temperature PBTI Testing Predict Dual-Gated ITO FET Long-term Reliability?” Technical Digest International Electron Devices Meeting Iedm, 2025. Scopus, doi:10.1109/IEDM50572.2025.11353802.
Rahman MS, Matthews D, Zhang B, Hishe HF, Villena MA, Chen J, Chopra A, Chauhan S, Fernando A, Thareja G, Roy T. Can High-Temperature PBTI Testing Predict Dual-Gated ITO FET Long-term Reliability? Technical Digest International Electron Devices Meeting Iedm. 2025.

Published In

Technical Digest International Electron Devices Meeting Iedm

DOI

10.1109/IEDM50572.2025.11353802

ISSN

0163-1918

Publication Date

January 1, 2025