Temperature dependence of the quantized Hall effect
Publication
, Journal Article
Wei, HP; Chang, AM; Tsui, DC; Razeghi, M
Published in: Physical Review B
January 1, 1985
We reported detailed measurements of the temperature dependence of the quantized Hall effect from 4.2 to 50 K in the i=2 plateau region in InGaAs-InP. We deduce from the data that there is a significant density of localized states between the two Landau levels, with a value of 1×1010 cm-2 meV-1 at the middle of the mobility gap. We also found that the correlations between xx and xy show the trend predicted by the recent two-parameter scaling theory of localization in quantized Hall effect. © 1985 The American Physical Society.
Duke Scholars
Published In
Physical Review B
DOI
ISSN
0163-1829
Publication Date
January 1, 1985
Volume
32
Issue
10
Start / End Page
7016 / 7019
Citation
APA
Chicago
ICMJE
MLA
NLM
Wei, H. P., Chang, A. M., Tsui, D. C., & Razeghi, M. (1985). Temperature dependence of the quantized Hall effect. Physical Review B, 32(10), 7016–7019. https://doi.org/10.1103/PhysRevB.32.7016
Wei, H. P., A. M. Chang, D. C. Tsui, and M. Razeghi. “Temperature dependence of the quantized Hall effect.” Physical Review B 32, no. 10 (January 1, 1985): 7016–19. https://doi.org/10.1103/PhysRevB.32.7016.
Wei HP, Chang AM, Tsui DC, Razeghi M. Temperature dependence of the quantized Hall effect. Physical Review B. 1985 Jan 1;32(10):7016–9.
Wei, H. P., et al. “Temperature dependence of the quantized Hall effect.” Physical Review B, vol. 32, no. 10, Jan. 1985, pp. 7016–19. Scopus, doi:10.1103/PhysRevB.32.7016.
Wei HP, Chang AM, Tsui DC, Razeghi M. Temperature dependence of the quantized Hall effect. Physical Review B. 1985 Jan 1;32(10):7016–7019.
Published In
Physical Review B
DOI
ISSN
0163-1829
Publication Date
January 1, 1985
Volume
32
Issue
10
Start / End Page
7016 / 7019