ON THE NATURE OF POINT DEFECTS AND THE EFFECT OF OXIDATION ON SUBSTITUTIONAL DOPANT DIFFUSION IN SILICON.
Publication
, Journal Article
Tan, TY; Gosele, U; Morehead, FF
Published in: Applied Physics A: Solids and Surfaces
1983
An extensive analysis of the substitutional dopant diffusion phenomena in silicon during oxidation is presented. The analysis covers qualitative as well as quantitative aspects of the oxidation-enhanced and -retarded diffusion (OED and ORD) phenomena, and examines three different possible assumptions that can be made on the nature of the silicon thermal equilibrium point defect species: silicon self-interstitials (I) only, vacancies (V) only, coexistence of I and V. The only consistent way to interpret all properly documented OED/ORD data is to assume that I and V coexist under oxidation as well as under thermal equilibrium conditions at high temperatures.
Duke Scholars
Published In
Applied Physics A: Solids and Surfaces
Publication Date
1983
Volume
A 31
Issue
2
Start / End Page
97 / 108
Citation
APA
Chicago
ICMJE
MLA
NLM
Tan, T. Y., Gosele, U., & Morehead, F. F. (1983). ON THE NATURE OF POINT DEFECTS AND THE EFFECT OF OXIDATION ON SUBSTITUTIONAL DOPANT DIFFUSION IN SILICON. Applied Physics A: Solids and Surfaces, A 31(2), 97–108.
Tan, T. Y., U. Gosele, and F. F. Morehead. “ON THE NATURE OF POINT DEFECTS AND THE EFFECT OF OXIDATION ON SUBSTITUTIONAL DOPANT DIFFUSION IN SILICON.” Applied Physics A: Solids and Surfaces A 31, no. 2 (1983): 97–108.
Tan TY, Gosele U, Morehead FF. ON THE NATURE OF POINT DEFECTS AND THE EFFECT OF OXIDATION ON SUBSTITUTIONAL DOPANT DIFFUSION IN SILICON. Applied Physics A: Solids and Surfaces. 1983;A 31(2):97–108.
Tan, T. Y., et al. “ON THE NATURE OF POINT DEFECTS AND THE EFFECT OF OXIDATION ON SUBSTITUTIONAL DOPANT DIFFUSION IN SILICON.” Applied Physics A: Solids and Surfaces, vol. A 31, no. 2, 1983, pp. 97–108.
Tan TY, Gosele U, Morehead FF. ON THE NATURE OF POINT DEFECTS AND THE EFFECT OF OXIDATION ON SUBSTITUTIONAL DOPANT DIFFUSION IN SILICON. Applied Physics A: Solids and Surfaces. 1983;A 31(2):97–108.
Published In
Applied Physics A: Solids and Surfaces
Publication Date
1983
Volume
A 31
Issue
2
Start / End Page
97 / 108