Determination of vacancy and self-interstitial contributions to gallium self-diffusion in GaAs
Publication
, Journal Article
Tan, TY; Yu, S; Gösele, U
Published in: Journal of Applied Physics
December 1, 1991
A quantitative determination of the contributions of the triply negatively charged Ga vacancies (V3-Ga) and of the doubly positively charged Ga self-interstitials (I2+Ga) to the Ga self-diffusion coefficient in GaAs has been carried out. Under thermal equilibrium and intrinsic conditions, the V3-Ga contribution is characterized by an activation enthalpy of 6 eV for As-rich crystals and of 7.52 eV for Ga-rich crystals, while the I2+Ga contribution is characterized by an activation enthalpy of 4.89 eV for As-rich crystals and of 3.37 eV for Ga-rich crystals.
Duke Scholars
Published In
Journal of Applied Physics
DOI
ISSN
0021-8979
Publication Date
December 1, 1991
Volume
70
Issue
9
Start / End Page
4823 / 4826
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 49 Mathematical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
- 01 Mathematical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Tan, T. Y., Yu, S., & Gösele, U. (1991). Determination of vacancy and self-interstitial contributions to gallium self-diffusion in GaAs. Journal of Applied Physics, 70(9), 4823–4826. https://doi.org/10.1063/1.349048
Tan, T. Y., S. Yu, and U. Gösele. “Determination of vacancy and self-interstitial contributions to gallium self-diffusion in GaAs.” Journal of Applied Physics 70, no. 9 (December 1, 1991): 4823–26. https://doi.org/10.1063/1.349048.
Tan TY, Yu S, Gösele U. Determination of vacancy and self-interstitial contributions to gallium self-diffusion in GaAs. Journal of Applied Physics. 1991 Dec 1;70(9):4823–6.
Tan, T. Y., et al. “Determination of vacancy and self-interstitial contributions to gallium self-diffusion in GaAs.” Journal of Applied Physics, vol. 70, no. 9, Dec. 1991, pp. 4823–26. Scopus, doi:10.1063/1.349048.
Tan TY, Yu S, Gösele U. Determination of vacancy and self-interstitial contributions to gallium self-diffusion in GaAs. Journal of Applied Physics. 1991 Dec 1;70(9):4823–4826.
Published In
Journal of Applied Physics
DOI
ISSN
0021-8979
Publication Date
December 1, 1991
Volume
70
Issue
9
Start / End Page
4823 / 4826
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 49 Mathematical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
- 01 Mathematical Sciences