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Diffusion mechanism of zinc and beryllium in gallium arsenide

Publication ,  Journal Article
Yu, S; Tan, TY; Gösele, U
Published in: Journal of Applied Physics
December 1, 1991

The outstanding features associated with Zn and Be diffusion in GaAs substrates and GaAs/AlGaAs superlattices are explained either quantitatively or semiquantitatively using the kick-out mechanism, in which it is assumed that the doubly positively charged Ga self-interstitial governs Ga self-diffusion. These features include (i) the dependence of the Zn solubility upon the pressures of the As and Zn vapor phases, (ii) the square power-law dependence of the Zn diffusivity on its own background concentrations under Zn isoconcentration diffusion conditions, (iii) the different shapes of the Zn in-diffusion profiles, (iv) the much lower diffusivities of Zn and Be under out-diffusion conditions than under in-diffusion conditions, and (v) the tremendous enhancement effect of Zn in-diffusion on GaAs/AlGaAs superlattice disordering and the undetectable effect of Be under out-diffusion conditions. Some useful quantitative information has been obtained. Strictly on a qualitative basis, we have found that the Longini mechanism is also able to explain the above features (i)-(iv) fairly well. The predicted effects of the Longini mechanism on Ga self-diffusion are, however, contrary to experimental results associated with superlattice disordering.

Duke Scholars

Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

December 1, 1991

Volume

69

Issue

6

Start / End Page

3547 / 3565

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences
 

Citation

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Yu, S., Tan, T. Y., & Gösele, U. (1991). Diffusion mechanism of zinc and beryllium in gallium arsenide. Journal of Applied Physics, 69(6), 3547–3565. https://doi.org/10.1063/1.348497
Yu, S., T. Y. Tan, and U. Gösele. “Diffusion mechanism of zinc and beryllium in gallium arsenide.” Journal of Applied Physics 69, no. 6 (December 1, 1991): 3547–65. https://doi.org/10.1063/1.348497.
Yu S, Tan TY, Gösele U. Diffusion mechanism of zinc and beryllium in gallium arsenide. Journal of Applied Physics. 1991 Dec 1;69(6):3547–65.
Yu, S., et al. “Diffusion mechanism of zinc and beryllium in gallium arsenide.” Journal of Applied Physics, vol. 69, no. 6, Dec. 1991, pp. 3547–65. Scopus, doi:10.1063/1.348497.
Yu S, Tan TY, Gösele U. Diffusion mechanism of zinc and beryllium in gallium arsenide. Journal of Applied Physics. 1991 Dec 1;69(6):3547–3565.
Journal cover image

Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

December 1, 1991

Volume

69

Issue

6

Start / End Page

3547 / 3565

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences