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Modeling of nucleation and growth of voids in silicon

Publication ,  Journal Article
Plekhanov, PS; Gösele, UM; Tan, TY
Published in: Journal of Applied Physics
July 15, 1998

During Si crystal growth, nucleation and growth of voids and vacancy-type dislocation loops under Si vacancy supersaturation conditions have been modeled. From nucleation barrier calculations, it is shown that voids can be nucleated, but not dislocation loops. The homogeneous nucleation rate of voids has been calculated for different temperatures by assuming different enthalpy of Si vacancy formation. The void growth process has been calculated using a moving boundary formulation. Matching the results of void nucleation and growth simulations and taking into account the competition between the two processes, limited time available, and the crystal cooling rate, it is shown that the experimentally observed void density and size data can be explained if the Si vacancy formation enthalpy is in the range of 2.8-3.4 eV and the void nucleation temperature is in the range of 970-1060 °C. © 1998 American Institute of Physics.

Duke Scholars

Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

July 15, 1998

Volume

84

Issue

2

Start / End Page

718 / 726

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences
 

Citation

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Plekhanov, P. S., Gösele, U. M., & Tan, T. Y. (1998). Modeling of nucleation and growth of voids in silicon. Journal of Applied Physics, 84(2), 718–726. https://doi.org/10.1063/1.368128
Plekhanov, P. S., U. M. Gösele, and T. Y. Tan. “Modeling of nucleation and growth of voids in silicon.” Journal of Applied Physics 84, no. 2 (July 15, 1998): 718–26. https://doi.org/10.1063/1.368128.
Plekhanov PS, Gösele UM, Tan TY. Modeling of nucleation and growth of voids in silicon. Journal of Applied Physics. 1998 Jul 15;84(2):718–26.
Plekhanov, P. S., et al. “Modeling of nucleation and growth of voids in silicon.” Journal of Applied Physics, vol. 84, no. 2, July 1998, pp. 718–26. Scopus, doi:10.1063/1.368128.
Plekhanov PS, Gösele UM, Tan TY. Modeling of nucleation and growth of voids in silicon. Journal of Applied Physics. 1998 Jul 15;84(2):718–726.
Journal cover image

Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

July 15, 1998

Volume

84

Issue

2

Start / End Page

718 / 726

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences