Metallic precipitate contribution to carrier generation in metal-oxide-semiconductor capacitors due to the Schottky effect
Publication
, Journal Article
Negoita, MD; Tan, TY
Published in: Journal of Applied Physics
January 1, 2004
The modeling work on the electrical behavior of metallic precipitates in the depletion region of metal-oxide-semiconductor (MOS) capacitors, which is also based on the Schottky effect is reported. Besides the pn junction, the MOS capacitor is the most abundantly used device in Si ICs. In fact, aside from source and drain regions, the MOS field-effect transistor (MOSFET) is itself a capacitor.
Duke Scholars
Published In
Journal of Applied Physics
DOI
ISSN
0021-8979
Publication Date
January 1, 2004
Volume
95
Issue
1
Start / End Page
191 / 198
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 49 Mathematical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
- 01 Mathematical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Negoita, M. D., & Tan, T. Y. (2004). Metallic precipitate contribution to carrier generation in metal-oxide-semiconductor capacitors due to the Schottky effect. Journal of Applied Physics, 95(1), 191–198. https://doi.org/10.1063/1.1630701
Negoita, M. D., and T. Y. Tan. “Metallic precipitate contribution to carrier generation in metal-oxide-semiconductor capacitors due to the Schottky effect.” Journal of Applied Physics 95, no. 1 (January 1, 2004): 191–98. https://doi.org/10.1063/1.1630701.
Negoita MD, Tan TY. Metallic precipitate contribution to carrier generation in metal-oxide-semiconductor capacitors due to the Schottky effect. Journal of Applied Physics. 2004 Jan 1;95(1):191–8.
Negoita, M. D., and T. Y. Tan. “Metallic precipitate contribution to carrier generation in metal-oxide-semiconductor capacitors due to the Schottky effect.” Journal of Applied Physics, vol. 95, no. 1, Jan. 2004, pp. 191–98. Scopus, doi:10.1063/1.1630701.
Negoita MD, Tan TY. Metallic precipitate contribution to carrier generation in metal-oxide-semiconductor capacitors due to the Schottky effect. Journal of Applied Physics. 2004 Jan 1;95(1):191–198.
Published In
Journal of Applied Physics
DOI
ISSN
0021-8979
Publication Date
January 1, 2004
Volume
95
Issue
1
Start / End Page
191 / 198
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 49 Mathematical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
- 01 Mathematical Sciences