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ON OXYGEN PRECIPITATION RETARDATION/RECOVERY PHENOMENA, NUCLEATION INCUBATION PHENOMENON, AND THE EXIGENT-ACCOMMODATION-VOLUME FACTOR OF PRECIPITATION.

Publication ,  Journal Article
Tan, TY; Kung, CY
Published in: Proceedings the Electrochemical Society
December 1, 1986

We describe the nature of an exigent-accommodation-volume factor associated with oxygen (O//i) precipitation in Czochralski (CZ) Si. This factor is regarded as a causal or characteristic factor which influences many aspects of the SiO//2 precipitate nucleation and growth phenomena. Employing this factor, we describe the possible explanations of two outstanding features of O//i precipitation in CZ Si: the precipitation retardation/recovery and the nucleation incubation phenomena.

Duke Scholars

Published In

Proceedings the Electrochemical Society

ISSN

0161-6374

Publication Date

December 1, 1986

Volume

86-4

Start / End Page

864 / 873
 

Citation

APA
Chicago
ICMJE
MLA
NLM

Published In

Proceedings the Electrochemical Society

ISSN

0161-6374

Publication Date

December 1, 1986

Volume

86-4

Start / End Page

864 / 873