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ON OXYGEN PRECIPITATION RETARDATION/RECOVERY PHENOMENA, NUCLEATION INCUBATION PHENOMENON, AND THE EXIGENT-ACCOMMODATION-VOLUME FACTOR OF PRECIPITATION.

Publication ,  Journal Article
Tan, TY; Kung, CY
Published in: Proceedings - The Electrochemical Society
December 1, 1986

We describe the nature of an exigent-accommodation-volume factor associated with oxygen (O//i) precipitation in Czochralski (CZ) Si. This factor is regarded as a causal or characteristic factor which influences many aspects of the SiO//2 precipitate nucleation and growth phenomena. Employing this factor, we describe the possible explanations of two outstanding features of O//i precipitation in CZ Si: the precipitation retardation/recovery and the nucleation incubation phenomena.

Duke Scholars

Published In

Proceedings - The Electrochemical Society

ISSN

0161-6374

Publication Date

December 1, 1986

Volume

86-4

Start / End Page

864 / 873
 

Citation

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Tan, T. Y., and C. Y. Kung. “ON OXYGEN PRECIPITATION RETARDATION/RECOVERY PHENOMENA, NUCLEATION INCUBATION PHENOMENON, AND THE EXIGENT-ACCOMMODATION-VOLUME FACTOR OF PRECIPITATION.Proceedings - The Electrochemical Society 86–4 (December 1, 1986): 864–73.
Tan, T. Y., and C. Y. Kung. “ON OXYGEN PRECIPITATION RETARDATION/RECOVERY PHENOMENA, NUCLEATION INCUBATION PHENOMENON, AND THE EXIGENT-ACCOMMODATION-VOLUME FACTOR OF PRECIPITATION.Proceedings - The Electrochemical Society, vol. 86–4, Dec. 1986, pp. 864–73.

Published In

Proceedings - The Electrochemical Society

ISSN

0161-6374

Publication Date

December 1, 1986

Volume

86-4

Start / End Page

864 / 873