Correlation between Schottky barrier height and phase stoichiometry/structure of silicide-silicon interfaces
Publication
, Journal Article
Schmid, PE; Ho, PS; Tan, TY
Published in: J. Vac. Sci. Technol. (USA)
1982
Summary form only given. The authors investigate to what extent the stoichiometry and microstructure of the bulk silicide affect the Schottky barrier height (SHB) at the interface by measuring the SHB of Ni and Pd silicide-Si interfaces focused on (100) and (111) substrates
Duke Scholars
Published In
J. Vac. Sci. Technol. (USA)
DOI
Publication Date
1982
Volume
20
Issue
3
Start / End Page
688 / 689
Location
Anaheim, CA, USA
Citation
APA
Chicago
ICMJE
MLA
NLM
Schmid, P. E., Ho, P. S., & Tan, T. Y. (1982). Correlation between Schottky barrier height and phase stoichiometry/structure of silicide-silicon interfaces. J. Vac. Sci. Technol. (USA), 20(3), 688–689. https://doi.org/10.1116/1.571629
Schmid, P. E., P. S. Ho, and T. Y. Tan. “Correlation between Schottky barrier height and phase stoichiometry/structure of silicide-silicon interfaces.” J. Vac. Sci. Technol. (USA) 20, no. 3 (1982): 688–89. https://doi.org/10.1116/1.571629.
Schmid PE, Ho PS, Tan TY. Correlation between Schottky barrier height and phase stoichiometry/structure of silicide-silicon interfaces. J Vac Sci Technol (USA). 1982;20(3):688–9.
Schmid, P. E., et al. “Correlation between Schottky barrier height and phase stoichiometry/structure of silicide-silicon interfaces.” J. Vac. Sci. Technol. (USA), vol. 20, no. 3, 1982, pp. 688–89. Manual, doi:10.1116/1.571629.
Schmid PE, Ho PS, Tan TY. Correlation between Schottky barrier height and phase stoichiometry/structure of silicide-silicon interfaces. J Vac Sci Technol (USA). 1982;20(3):688–689.
Published In
J. Vac. Sci. Technol. (USA)
DOI
Publication Date
1982
Volume
20
Issue
3
Start / End Page
688 / 689
Location
Anaheim, CA, USA