In depth generation lifetime profiling of heat‐treated czochralski silicon
Publication
, Journal Article
Braunig, D; Yang, KH; Tan, TY; Schneider, CP
Published in: physica status solidi (a)
January 1, 1985
A technique is given for measuring the MOS generation lifetime of minority carriers as a function of depth from the silicon wafer surface. The technique monitors a transient current instead of the more commonly utilized transient capacitance, and is capable of obtaining a whole in‐depth lifetime profile in one measurement. Heat treated silicon wafers examined in this study exhibit a constant high lifetime close to the wafer surface, and the lifetime decreases toward the bulk. This is correlated to SiO2 precipitation and gettering behavior. Copyright © 1985 WILEY‐VCH Verlag GmbH & Co. KGaA
Duke Scholars
Published In
physica status solidi (a)
DOI
EISSN
1521-396X
ISSN
0031-8965
Publication Date
January 1, 1985
Volume
92
Issue
1
Start / End Page
327 / 335
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 4018 Nanotechnology
- 4016 Materials engineering
- 1007 Nanotechnology
- 0912 Materials Engineering
- 0204 Condensed Matter Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Braunig, D., Yang, K. H., Tan, T. Y., & Schneider, C. P. (1985). In depth generation lifetime profiling of heat‐treated czochralski silicon. Physica Status Solidi (A), 92(1), 327–335. https://doi.org/10.1002/pssa.2210920134
Braunig, D., K. H. Yang, T. Y. Tan, and C. P. Schneider. “In depth generation lifetime profiling of heat‐treated czochralski silicon.” Physica Status Solidi (A) 92, no. 1 (January 1, 1985): 327–35. https://doi.org/10.1002/pssa.2210920134.
Braunig D, Yang KH, Tan TY, Schneider CP. In depth generation lifetime profiling of heat‐treated czochralski silicon. physica status solidi (a). 1985 Jan 1;92(1):327–35.
Braunig, D., et al. “In depth generation lifetime profiling of heat‐treated czochralski silicon.” Physica Status Solidi (A), vol. 92, no. 1, Jan. 1985, pp. 327–35. Scopus, doi:10.1002/pssa.2210920134.
Braunig D, Yang KH, Tan TY, Schneider CP. In depth generation lifetime profiling of heat‐treated czochralski silicon. physica status solidi (a). 1985 Jan 1;92(1):327–335.
Published In
physica status solidi (a)
DOI
EISSN
1521-396X
ISSN
0031-8965
Publication Date
January 1, 1985
Volume
92
Issue
1
Start / End Page
327 / 335
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 4018 Nanotechnology
- 4016 Materials engineering
- 1007 Nanotechnology
- 0912 Materials Engineering
- 0204 Condensed Matter Physics