A "smarter-cut" approach to low temperature silicon layer transfer

Silicon wafers were first implanted at room temperature by B⁺ with 5.0×10¹² to 5.0×10¹⁵ ions/ cm² at 180 keV, and subsequently implanted by H2⁺ with 5.0×10¹⁶ ions/cm² at an energy which locates the H-peak concentration in the silicon wafers at the same position as that of the implanted boron peak. Compared to the H-only implanted samples, the temperature for a B+H coimplanted silicon layer to split from its substrate after wafer bonding during a heat treatment for a given time is reduced significantly. Further reduction of the splitting temperature is accomplished by appropriate prebonding annealing of the B+H coimplanted wafers. Combination of these two effects allows the transfer of a silicon layer from a silicon wafer onto a severely thermally mismatched substrate such as quartz at a temperature as low as 200°C. © 1998 American Institute of Physics.

Duke Scholars

Author Teh Yu Tan Thomas Lord Department of Mechanical Engineering and Materia ...