Carbon-induced undersaturation of silicon self-interstitials
Publication
, Journal Article
Scholz, R; Gösele, U; Huh, JY; Tan, TY
Published in: Applied Physics Letters
December 1, 1998
Carbon diffusion into silicon is well behaved and does not generate any nonequilibrium point defects. We show that, in contrast, the diffusion of carbon incorporated in silicon well above its solid solubility will cause an undersaturation of silicon self-interstitials, which in turn may cause retarded diffusion of boron. In addition, we predict that due to this undersaturation, the diffusion of built-in carbon spikes will lead to strongly non-Gaussian concentration profiles. © 1998 American Institute of Physics.
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Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1998
Volume
72
Issue
2
Start / End Page
200 / 202
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
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Scholz, R., Gösele, U., Huh, J. Y., & Tan, T. Y. (1998). Carbon-induced undersaturation of silicon self-interstitials. Applied Physics Letters, 72(2), 200–202. https://doi.org/10.1063/1.120684
Scholz, R., U. Gösele, J. Y. Huh, and T. Y. Tan. “Carbon-induced undersaturation of silicon self-interstitials.” Applied Physics Letters 72, no. 2 (December 1, 1998): 200–202. https://doi.org/10.1063/1.120684.
Scholz R, Gösele U, Huh JY, Tan TY. Carbon-induced undersaturation of silicon self-interstitials. Applied Physics Letters. 1998 Dec 1;72(2):200–2.
Scholz, R., et al. “Carbon-induced undersaturation of silicon self-interstitials.” Applied Physics Letters, vol. 72, no. 2, Dec. 1998, pp. 200–02. Scopus, doi:10.1063/1.120684.
Scholz R, Gösele U, Huh JY, Tan TY. Carbon-induced undersaturation of silicon self-interstitials. Applied Physics Letters. 1998 Dec 1;72(2):200–202.
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1998
Volume
72
Issue
2
Start / End Page
200 / 202
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences