Nucleation of CuSi precipitate colonies in oxygen-rich silicon
Publication
, Journal Article
Tice, WK; Tan, TY
Published in: Applied Physics Letters
December 1, 1976
The nucleation of CuSi precipitate colonies in silicon containing substantial amounts of oxygen has been studied by transmission electron microscopy. It is shown that oxygen in Si can influence precipitation of Cu by generating prismatic dislocation loops at the interface between the Si matrix and oxygen-rich precipitates. Such loops act as nucleation sites for CuSi precipitates, which form star-shaped colonies upon continued solid solution decomposition.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1976
Volume
28
Issue
9
Start / End Page
564 / 565
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Tice, W. K., & Tan, T. Y. (1976). Nucleation of CuSi precipitate colonies in oxygen-rich silicon. Applied Physics Letters, 28(9), 564–565. https://doi.org/10.1063/1.88825
Tice, W. K., and T. Y. Tan. “Nucleation of CuSi precipitate colonies in oxygen-rich silicon.” Applied Physics Letters 28, no. 9 (December 1, 1976): 564–65. https://doi.org/10.1063/1.88825.
Tice WK, Tan TY. Nucleation of CuSi precipitate colonies in oxygen-rich silicon. Applied Physics Letters. 1976 Dec 1;28(9):564–5.
Tice, W. K., and T. Y. Tan. “Nucleation of CuSi precipitate colonies in oxygen-rich silicon.” Applied Physics Letters, vol. 28, no. 9, Dec. 1976, pp. 564–65. Scopus, doi:10.1063/1.88825.
Tice WK, Tan TY. Nucleation of CuSi precipitate colonies in oxygen-rich silicon. Applied Physics Letters. 1976 Dec 1;28(9):564–565.
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1976
Volume
28
Issue
9
Start / End Page
564 / 565
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences