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Thermal equilibrium concentrations of point defects in gallium arsenide

Publication ,  Journal Article
Tan, TY
Published in: Journal of Physics and Chemistry of Solids
January 1, 1994

Expressions of the thermal equilibrium concentrations of point defects in GaAs, including the neutral and charged species, are derived. These expressions are explicit functions of well-defined thermodynamic quantities, which in turn yield explicit expressions for the reaction constant K in the usual As4 pressure power law representation of the point defect thermal equilibrium concentrations. Such power laws have been of little quantitative value in the past, because values for K were not known. In the present derivation, emphases are placed upon the difference between the Gibbs free energies of an As atom in the interior of a GaAs crystal and in an As vapor phase molecule, and the role of the crystal Fermi level. Numerical values of the thermal equilibrium concentrations of the neutral and three negatively charged Ga vacancies (V0Ga, V-Ga, V2-Ga and V3-Ga), the neutral As vacancies V0As and the two neutral antisite de Ga0As and As0Ga have been obtained. The calculated thermal equilibrium concentration of the anion antisite defect As0Ga reaches a peak value of about 1 sx 1017 cm-3 and is practically temperature independent, in agreement with experimental findings. The thermal equilibrium concentrations of the triply negatively charged Ga vacancy V3-Ga, Ceqv3-Ga(n), have been found to exhibit a temperature independence or a negati temperature dependence behavior under strong n-doping conditions. That is, the Ceqv3-Ga(n) value is either unchanged or increases as the temperature is lowered. This Ceqv3-Ga(n) property provided explanations to a number of outstanding experimental results, either requiring the interpretation that V3-Ga has attained its thermal equilibrium concentration at the onset of each experiment, or requiring mechanisms involving point defect nonequilibrium phenomena. The calculated Ceqv3-Ga(n) values are in agreement with available experimental results. © 1994.

Duke Scholars

Published In

Journal of Physics and Chemistry of Solids

DOI

ISSN

0022-3697

Publication Date

January 1, 1994

Volume

55

Issue

10

Start / End Page

917 / 929

Related Subject Headings

  • Physical Chemistry
  • 5104 Condensed matter physics
  • 3403 Macromolecular and materials chemistry
  • 3402 Inorganic chemistry
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0204 Condensed Matter Physics
 

Citation

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Tan, T. Y. (1994). Thermal equilibrium concentrations of point defects in gallium arsenide. Journal of Physics and Chemistry of Solids, 55(10), 917–929. https://doi.org/10.1016/0022-3697(94)90111-2
Tan, T. Y. “Thermal equilibrium concentrations of point defects in gallium arsenide.” Journal of Physics and Chemistry of Solids 55, no. 10 (January 1, 1994): 917–29. https://doi.org/10.1016/0022-3697(94)90111-2.
Tan TY. Thermal equilibrium concentrations of point defects in gallium arsenide. Journal of Physics and Chemistry of Solids. 1994 Jan 1;55(10):917–29.
Tan, T. Y. “Thermal equilibrium concentrations of point defects in gallium arsenide.” Journal of Physics and Chemistry of Solids, vol. 55, no. 10, Jan. 1994, pp. 917–29. Scopus, doi:10.1016/0022-3697(94)90111-2.
Tan TY. Thermal equilibrium concentrations of point defects in gallium arsenide. Journal of Physics and Chemistry of Solids. 1994 Jan 1;55(10):917–929.
Journal cover image

Published In

Journal of Physics and Chemistry of Solids

DOI

ISSN

0022-3697

Publication Date

January 1, 1994

Volume

55

Issue

10

Start / End Page

917 / 929

Related Subject Headings

  • Physical Chemistry
  • 5104 Condensed matter physics
  • 3403 Macromolecular and materials chemistry
  • 3402 Inorganic chemistry
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0204 Condensed Matter Physics