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Nucleation barrier of voids and dislocation loops in silicon

Publication ,  Journal Article
Tan, TY; Plekhanov, P; Gösele, UM
Published in: Applied Physics Letters
March 31, 1997

We have calculated the nucleation energy barrier of voids and vacancy (V) type dislocation loops in Si under V-supersaturation conditions. The barrier of V-type dislocation loops is higher than that of voids by more than one order of magnitude, with the former exceeding 35 eV at attainable V-supersaturation levels. Thus, voids can be nucleated, but not dislocation loops. This provides an explanation for the observations that, in Si crystals grown under V-supersaturation conditions, voids exist but V-type dislocation loops do not. Voids seriously degrade the Si device gate oxide integrity. It is highly probable that the D-type swirl defects in Si are nanoscopic voids. Our calculated results have also provided information for limiting the formation temperature range of the D-swirl defects to be lower than ∼1050 °C, and the Si V formation enthalpy to be above ∼3.0 eV. © 1997 American Institute of Physics.

Duke Scholars

Published In

Applied Physics Letters

DOI

ISSN

0003-6951

Publication Date

March 31, 1997

Volume

70

Issue

13

Start / End Page

1715 / 1717

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences
 

Citation

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Tan, T. Y., Plekhanov, P., & Gösele, U. M. (1997). Nucleation barrier of voids and dislocation loops in silicon. Applied Physics Letters, 70(13), 1715–1717. https://doi.org/10.1063/1.118652
Tan, T. Y., P. Plekhanov, and U. M. Gösele. “Nucleation barrier of voids and dislocation loops in silicon.” Applied Physics Letters 70, no. 13 (March 31, 1997): 1715–17. https://doi.org/10.1063/1.118652.
Tan TY, Plekhanov P, Gösele UM. Nucleation barrier of voids and dislocation loops in silicon. Applied Physics Letters. 1997 Mar 31;70(13):1715–7.
Tan, T. Y., et al. “Nucleation barrier of voids and dislocation loops in silicon.” Applied Physics Letters, vol. 70, no. 13, Mar. 1997, pp. 1715–17. Scopus, doi:10.1063/1.118652.
Tan TY, Plekhanov P, Gösele UM. Nucleation barrier of voids and dislocation loops in silicon. Applied Physics Letters. 1997 Mar 31;70(13):1715–1717.

Published In

Applied Physics Letters

DOI

ISSN

0003-6951

Publication Date

March 31, 1997

Volume

70

Issue

13

Start / End Page

1715 / 1717

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences