POINT DEFECTS AND DIFFUSION PROCESSES IN SILICON.
Publication
, Journal Article
Tan, TY; Goesele, U
Published in: Proceedings the Electrochemical Society
December 1, 1984
We review two subjects: oxidation effects which established that vacancies (V) and self-interstitials (I) coexist in Si; and Au diffusion into dislocation-free Si which allowed a determination of the I-component and an estimate of the V-component of the Si self-diffusion coefficient. We then discuss topics for which some new understanding is developing within the framework of the coexistence of I and V: reaching dynamical equilibrium of I and V; the point defect generating behavior of the (111) Si-SiO//2 interface; point defect generation due to nitridation; and the interaction of Au atoms with I and V as a function of temperature.
Duke Scholars
Published In
Proceedings the Electrochemical Society
Publication Date
December 1, 1984
Volume
84-7
Start / End Page
151 / 175
Citation
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Tan, T. Y., & Goesele, U. (1984). POINT DEFECTS AND DIFFUSION PROCESSES IN SILICON. Proceedings the Electrochemical Society, 84–7, 151–175.
Tan, T. Y., and U. Goesele. “POINT DEFECTS AND DIFFUSION PROCESSES IN SILICON.” Proceedings the Electrochemical Society 84–7 (December 1, 1984): 151–75.
Tan TY, Goesele U. POINT DEFECTS AND DIFFUSION PROCESSES IN SILICON. Proceedings the Electrochemical Society. 1984 Dec 1;84–7:151–75.
Tan, T. Y., and U. Goesele. “POINT DEFECTS AND DIFFUSION PROCESSES IN SILICON.” Proceedings the Electrochemical Society, vol. 84–7, Dec. 1984, pp. 151–75.
Tan TY, Goesele U. POINT DEFECTS AND DIFFUSION PROCESSES IN SILICON. Proceedings the Electrochemical Society. 1984 Dec 1;84–7:151–175.
Published In
Proceedings the Electrochemical Society
Publication Date
December 1, 1984
Volume
84-7
Start / End Page
151 / 175