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Liquid silicide formation of the Si wafer free structure during Ni diffusion at 1200°C

Publication ,  Journal Article
Li, J; Yang, W-S; Tan, TY; Chevacharoenkul, S; Chapman, R
Published in: J. Appl. Phys. (USA)
1992

An investigation of nickel diffusion in silicon wafers at 1200 °C, which is above a few Ni-Si eutectic and peritectic temperatures, has been performed. Czochralski Si wafers with nickel film on the back surfaces and mechanical damages on the front surfaces were annealed in different ambients for various periods of time. The wafers annealed in vacuum showed that a liquid phase rich in nickel has been formed at their front (initially free) surfaces at the annealing temperature. The amount of the liquid-phase material increases with an increase of the annealing time. After cooling down, the solidified materials showed various morphologies: spheres, polygons, dendrites, and terraces. The thermodynamic driving force leading to this phenomenon is attributed to the Si (free) surface energy

Duke Scholars

Published In

J. Appl. Phys. (USA)

DOI

Publication Date

1992

Volume

71

Issue

1

Start / End Page

196 / 203

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences
 

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Li, J., Yang, W.-S., Tan, T. Y., Chevacharoenkul, S., & Chapman, R. (1992). Liquid silicide formation of the Si wafer free structure during Ni diffusion at 1200°C. J. Appl. Phys. (USA), 71(1), 196–203. https://doi.org/10.1063/1.350736
Li, J., Woun-Suck Yang, T. Y. Tan, S. Chevacharoenkul, and R. Chapman. “Liquid silicide formation of the Si wafer free structure during Ni diffusion at 1200°C.” J. Appl. Phys. (USA) 71, no. 1 (1992): 196–203. https://doi.org/10.1063/1.350736.
Li J, Yang W-S, Tan TY, Chevacharoenkul S, Chapman R. Liquid silicide formation of the Si wafer free structure during Ni diffusion at 1200°C. J Appl Phys (USA). 1992;71(1):196–203.
Li, J., et al. “Liquid silicide formation of the Si wafer free structure during Ni diffusion at 1200°C.” J. Appl. Phys. (USA), vol. 71, no. 1, 1992, pp. 196–203. Manual, doi:10.1063/1.350736.
Li J, Yang W-S, Tan TY, Chevacharoenkul S, Chapman R. Liquid silicide formation of the Si wafer free structure during Ni diffusion at 1200°C. J Appl Phys (USA). 1992;71(1):196–203.

Published In

J. Appl. Phys. (USA)

DOI

Publication Date

1992

Volume

71

Issue

1

Start / End Page

196 / 203

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences