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Growth kinetics of oxidation-induced stacking faults in silicon: A new concept

Publication ,  Journal Article
Tan, TY; Gösele, U
Published in: Applied Physics Letters
December 1, 1981
Published version (DOI)

It is reasonable to assume that the volume increase of about 120% associated with the formation of a SiO2 molecule from a Si atom during thermal oxidation of Si is facilitated by viscoelastic flow of the newly formed SiO2 layer at the SiO2-Si interface. This flow is driven by a compressive plane stress. We propose that it is this stress which gives rise to a supersaturation of Si self-interstitials in the Si crystal, and that consequently the growth kinetics of oxidation-induced stacking faults is determined by the kinetics of the viscoelastic flow of the SiO2.

Duke Scholars

Teh Yu Tan
Author Teh Yu Tan Thomas Lord Department of Mechanical Engineering and Materia ...

Published In

Applied Physics Letters

DOI

10.1063/1.92526

ISSN

0003-6951

Publication Date

December 1, 1981

Volume

39

Issue

1

Start / End Page

86 / 88

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences
 

Citation

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Tan, T. Y., & Gösele, U. (1981). Growth kinetics of oxidation-induced stacking faults in silicon: A new concept. Applied Physics Letters, 39(1), 86–88. https://doi.org/10.1063/1.92526
Tan, T. Y., and U. Gösele. “Growth kinetics of oxidation-induced stacking faults in silicon: A new concept.” Applied Physics Letters 39, no. 1 (December 1, 1981): 86–88. https://doi.org/10.1063/1.92526.
Tan TY, Gösele U. Growth kinetics of oxidation-induced stacking faults in silicon: A new concept. Applied Physics Letters. 1981 Dec 1;39(1):86–8.
Tan, T. Y., and U. Gösele. “Growth kinetics of oxidation-induced stacking faults in silicon: A new concept.” Applied Physics Letters, vol. 39, no. 1, Dec. 1981, pp. 86–88. Scopus, doi:10.1063/1.92526.
Tan TY, Gösele U. Growth kinetics of oxidation-induced stacking faults in silicon: A new concept. Applied Physics Letters. 1981 Dec 1;39(1):86–88.

Published In

Applied Physics Letters

DOI

10.1063/1.92526

ISSN

0003-6951

Publication Date

December 1, 1981

Volume

39

Issue

1

Start / End Page

86 / 88

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences