Growth kinetics of oxidation-induced stacking faults in silicon: A new concept
Publication
, Journal Article
Tan, TY; Gösele, U
Published in: Applied Physics Letters
December 1, 1981
It is reasonable to assume that the volume increase of about 120% associated with the formation of a SiO2 molecule from a Si atom during thermal oxidation of Si is facilitated by viscoelastic flow of the newly formed SiO2 layer at the SiO2-Si interface. This flow is driven by a compressive plane stress. We propose that it is this stress which gives rise to a supersaturation of Si self-interstitials in the Si crystal, and that consequently the growth kinetics of oxidation-induced stacking faults is determined by the kinetics of the viscoelastic flow of the SiO2.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1981
Volume
39
Issue
1
Start / End Page
86 / 88
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
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ICMJE
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Tan, T. Y., & Gösele, U. (1981). Growth kinetics of oxidation-induced stacking faults in silicon: A new concept. Applied Physics Letters, 39(1), 86–88. https://doi.org/10.1063/1.92526
Tan, T. Y., and U. Gösele. “Growth kinetics of oxidation-induced stacking faults in silicon: A new concept.” Applied Physics Letters 39, no. 1 (December 1, 1981): 86–88. https://doi.org/10.1063/1.92526.
Tan TY, Gösele U. Growth kinetics of oxidation-induced stacking faults in silicon: A new concept. Applied Physics Letters. 1981 Dec 1;39(1):86–8.
Tan, T. Y., and U. Gösele. “Growth kinetics of oxidation-induced stacking faults in silicon: A new concept.” Applied Physics Letters, vol. 39, no. 1, Dec. 1981, pp. 86–88. Scopus, doi:10.1063/1.92526.
Tan TY, Gösele U. Growth kinetics of oxidation-induced stacking faults in silicon: A new concept. Applied Physics Letters. 1981 Dec 1;39(1):86–88.
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1981
Volume
39
Issue
1
Start / End Page
86 / 88
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences