Detection of extended interstitial chains in ion-damaged silicon
Publication
, Journal Article
Tan, TY; Föll, H; Krakow, W
Published in: Applied Physics Letters
December 1, 1980
We have carried out a high-resolution electron microscope lattice imaging study of As+ ion-damaged silicon. Along with dislocation dipoles and intermediate defect configurations from which the dislocation dipoles are generated,〈110〉 chain-type defects have also been detected. By image matching of the experimental and calculated micrographs, it is established that about 100% more interstitial silicon atoms were incorporated in the defective chain. A structure model of this defect is proposed wherein a di-interstitial occupying the 〈100〉 split position is incorporated into every available site along a 〈110〉 chain.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1980
Volume
37
Issue
12
Start / End Page
1102 / 1104
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Tan, T. Y., Föll, H., & Krakow, W. (1980). Detection of extended interstitial chains in ion-damaged silicon. Applied Physics Letters, 37(12), 1102–1104. https://doi.org/10.1063/1.91888
Tan, T. Y., H. Föll, and W. Krakow. “Detection of extended interstitial chains in ion-damaged silicon.” Applied Physics Letters 37, no. 12 (December 1, 1980): 1102–4. https://doi.org/10.1063/1.91888.
Tan TY, Föll H, Krakow W. Detection of extended interstitial chains in ion-damaged silicon. Applied Physics Letters. 1980 Dec 1;37(12):1102–4.
Tan, T. Y., et al. “Detection of extended interstitial chains in ion-damaged silicon.” Applied Physics Letters, vol. 37, no. 12, Dec. 1980, pp. 1102–04. Scopus, doi:10.1063/1.91888.
Tan TY, Föll H, Krakow W. Detection of extended interstitial chains in ion-damaged silicon. Applied Physics Letters. 1980 Dec 1;37(12):1102–1104.
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1980
Volume
37
Issue
12
Start / End Page
1102 / 1104
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences