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A model for growth directional features in silicon nanowires

Publication ,  Journal Article
Tan, TY; Lee, ST; Gosele, U
Published in: Appl. Phys. A, Mater. Sci. Process. (Germany)
2002

Long silicon nanowires (SiNWs) grown by laser ablation or by thermal evaporation of monoxide source materials are primarily oriented in the (112) direction, and some in the (110) direction, but rarely in the (100) or (111) directions. We propose a model to explain these SiNW growth directional features. The model consists of two parts. Part one is concerned with mechanism-based criteria and part two with applying these criteria to explain the experimental results. Four criteria are considered: (i) the stability of a Si atom occupying a surface site; (ii) the Si {111} surface stability in the presence of oxygen; (iii) the stepped Si {111} surface layer lateral growth process; and (iv) the effect of dislocations in providing perpetuating {111} steps to facilitate SiNW growth. Analyses of SiNW growth in accordance with these criteria showed that (112) and (110) are the preferred SiNW growth directions, and that (111) and (100) are not

Duke Scholars

Published In

Appl. Phys. A, Mater. Sci. Process. (Germany)

DOI

Publication Date

2002

Volume

A74

Issue

3

Start / End Page

423 / 432

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 5102 Atomic, molecular and optical physics
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0205 Optical Physics
  • 0204 Condensed Matter Physics
 

Citation

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Tan, T. Y., Lee, S. T., & Gosele, U. (2002). A model for growth directional features in silicon nanowires. Appl. Phys. A, Mater. Sci. Process. (Germany), A74(3), 423–432. https://doi.org/10.1007/s003390101133
Tan, T. Y., S. T. Lee, and U. Gosele. “A model for growth directional features in silicon nanowires.” Appl. Phys. A, Mater. Sci. Process. (Germany) A74, no. 3 (2002): 423–32. https://doi.org/10.1007/s003390101133.
Tan TY, Lee ST, Gosele U. A model for growth directional features in silicon nanowires. Appl Phys A, Mater Sci Process (Germany). 2002;A74(3):423–32.
Tan, T. Y., et al. “A model for growth directional features in silicon nanowires.” Appl. Phys. A, Mater. Sci. Process. (Germany), vol. A74, no. 3, 2002, pp. 423–32. Manual, doi:10.1007/s003390101133.
Tan TY, Lee ST, Gosele U. A model for growth directional features in silicon nanowires. Appl Phys A, Mater Sci Process (Germany). 2002;A74(3):423–432.

Published In

Appl. Phys. A, Mater. Sci. Process. (Germany)

DOI

Publication Date

2002

Volume

A74

Issue

3

Start / End Page

423 / 432

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 5102 Atomic, molecular and optical physics
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0205 Optical Physics
  • 0204 Condensed Matter Physics