Interdiffusion studies in GaAsP/GaAs and GaAsSb/GaAs superlattices under various arsenic vapor pressures
Publication
, Journal Article
Egger, U; Schultz, M; Werner, P; Breitenstein, O; Tan, TY; Gösele, U; Franzheld, R; Uematsu, M; Ito, H
Published in: Journal of Applied Physics
May 1, 1997
Interdiffusion coefficients on the group V sublattice of GaAs were determined in GaAsP/GaAs and GaAsSb/GaAs superlattices. Strained GaAs0.86P0.14/GaAs, GaAs0.8P0.2/GaAs0.975P0.025 and GaAs0.98Sb0.02/GaAs superlattices were annealed between 850°C and 1100°C under different arsenic vapor pressures. The diffusion coefficient was measured by secondary ion mass spectroscopy and cathodoluminescence spectroscopy. The interdiffusion coefficient was higher under arsenic-rich conditions than under gallium-rich conditions, pointing to an interstitial-substitutional type of diffusion mechanism. © 1997 American Institute of Physics.
Duke Scholars
Published In
Journal of Applied Physics
DOI
ISSN
0021-8979
Publication Date
May 1, 1997
Volume
81
Issue
9
Start / End Page
6056 / 6061
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 49 Mathematical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
- 01 Mathematical Sciences
Citation
APA
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MLA
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Egger, U., Schultz, M., Werner, P., Breitenstein, O., Tan, T. Y., Gösele, U., … Ito, H. (1997). Interdiffusion studies in GaAsP/GaAs and GaAsSb/GaAs superlattices under various arsenic vapor pressures. Journal of Applied Physics, 81(9), 6056–6061. https://doi.org/10.1063/1.364453
Egger, U., M. Schultz, P. Werner, O. Breitenstein, T. Y. Tan, U. Gösele, R. Franzheld, M. Uematsu, and H. Ito. “Interdiffusion studies in GaAsP/GaAs and GaAsSb/GaAs superlattices under various arsenic vapor pressures.” Journal of Applied Physics 81, no. 9 (May 1, 1997): 6056–61. https://doi.org/10.1063/1.364453.
Egger U, Schultz M, Werner P, Breitenstein O, Tan TY, Gösele U, et al. Interdiffusion studies in GaAsP/GaAs and GaAsSb/GaAs superlattices under various arsenic vapor pressures. Journal of Applied Physics. 1997 May 1;81(9):6056–61.
Egger, U., et al. “Interdiffusion studies in GaAsP/GaAs and GaAsSb/GaAs superlattices under various arsenic vapor pressures.” Journal of Applied Physics, vol. 81, no. 9, May 1997, pp. 6056–61. Scopus, doi:10.1063/1.364453.
Egger U, Schultz M, Werner P, Breitenstein O, Tan TY, Gösele U, Franzheld R, Uematsu M, Ito H. Interdiffusion studies in GaAsP/GaAs and GaAsSb/GaAs superlattices under various arsenic vapor pressures. Journal of Applied Physics. 1997 May 1;81(9):6056–6061.
Published In
Journal of Applied Physics
DOI
ISSN
0021-8979
Publication Date
May 1, 1997
Volume
81
Issue
9
Start / End Page
6056 / 6061
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 49 Mathematical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
- 01 Mathematical Sciences