Influence of dislocations on diffusion-induced nonequilibrium point defects in III-V compounds
Publication
, Journal Article
Marioton, BPR; Tan, TY; Gösele, U
Published in: Applied Physics Letters
December 1, 1989
Diffusion of elements migrating via a substitutional-interstitial mechanism in III-V compounds may induce nonequilibrium concentrations of native point defects. It has generally been assumed in the literature that, in the presence of dislocations, the point defects approach their thermal equilibrium concentrations. In contrast, it will be shown here that in III-V compounds the most favorable concentration a perturbed mobile species in one sublattice can reach corresponds to that of establishing a local equilibrium relation with another mobile species in the other sublattice if long-range transport of the defects to crystal surfaces is absent.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1989
Volume
54
Issue
9
Start / End Page
849 / 851
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Marioton, B. P. R., Tan, T. Y., & Gösele, U. (1989). Influence of dislocations on diffusion-induced nonequilibrium point defects in III-V compounds. Applied Physics Letters, 54(9), 849–851. https://doi.org/10.1063/1.100846
Marioton, B. P. R., T. Y. Tan, and U. Gösele. “Influence of dislocations on diffusion-induced nonequilibrium point defects in III-V compounds.” Applied Physics Letters 54, no. 9 (December 1, 1989): 849–51. https://doi.org/10.1063/1.100846.
Marioton BPR, Tan TY, Gösele U. Influence of dislocations on diffusion-induced nonequilibrium point defects in III-V compounds. Applied Physics Letters. 1989 Dec 1;54(9):849–51.
Marioton, B. P. R., et al. “Influence of dislocations on diffusion-induced nonequilibrium point defects in III-V compounds.” Applied Physics Letters, vol. 54, no. 9, Dec. 1989, pp. 849–51. Scopus, doi:10.1063/1.100846.
Marioton BPR, Tan TY, Gösele U. Influence of dislocations on diffusion-induced nonequilibrium point defects in III-V compounds. Applied Physics Letters. 1989 Dec 1;54(9):849–851.
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1989
Volume
54
Issue
9
Start / End Page
849 / 851
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences