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Oxygen diffusion and thermal donor formation in silicon

Publication ,  Journal Article
Gosele, U; Tan, TY
Published in: Appl. Phys. A, Solids Surf. (West Germany)
1982

The information available on the diffusion of oxygen and on the formation of thermal donors in silicon is critically reviewed. In this context the effects of intrinsic point defects on the diffusion-controlled growth of oxygen precipitates is investigated in some detail. Seemingly contradictory experimental results on the diffusivity of oxygen in silicon at temperatures around 400°C are explained in terms of fast-diffusing gas-like molecular oxygen in silicon. The concept of molecular oxygen is also invoked in a newly suggested model of thermal donor formation in silicon. The diffusivity of molecular oxygen in silicon is estimated to be around 10-9 cm2 s-1 at 450°C, almost nine orders of magnitude higher than the s/ini/in i/ diffusivity of atomic oxygen in interstitial position

Duke Scholars

Published In

Appl. Phys. A, Solids Surf. (West Germany)

Publication Date

1982

Volume

A28

Issue

2

Start / End Page

79 / 92
 

Citation

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Gosele, U., & Tan, T. Y. (1982). Oxygen diffusion and thermal donor formation in silicon. Appl. Phys. A, Solids Surf. (West Germany), A28(2), 79–92.
Gosele, U., and T. Y. Tan. “Oxygen diffusion and thermal donor formation in silicon.” Appl. Phys. A, Solids Surf. (West Germany) A28, no. 2 (1982): 79–92.
Gosele U, Tan TY. Oxygen diffusion and thermal donor formation in silicon. Appl Phys A, Solids Surf (West Germany). 1982;A28(2):79–92.
Gosele, U., and T. Y. Tan. “Oxygen diffusion and thermal donor formation in silicon.” Appl. Phys. A, Solids Surf. (West Germany), vol. A28, no. 2, 1982, pp. 79–92.
Gosele U, Tan TY. Oxygen diffusion and thermal donor formation in silicon. Appl Phys A, Solids Surf (West Germany). 1982;A28(2):79–92.

Published In

Appl. Phys. A, Solids Surf. (West Germany)

Publication Date

1982

Volume

A28

Issue

2

Start / End Page

79 / 92