Laser annealing of silicon implanted with both argon and arsenic
Publication
, Journal Article
Rimini, E; Chu, WK; Baglin, JEE; Tan, TY; Hodgson, RT
Published in: Applied Physics Letters
December 1, 1980
Silicon samples implanted with both Ar and As at fluences of 1×1016/cm2 were irradiated with Q-switched Nd:YAG double-frequency laser pulses. Reordering of the damaged layers occurs for 30- and 130-keV Ar implants at about 0.6 and 1.3 J/cm2, respectively. An Ar concentration of the order of (1-3)×1020 atoms/cm 3 is retained, while good As substitutionality is observed. The presence of Ar atoms does not seem to inhibit the As-Si reordering during pulsed laser annealing, and likewise the As atoms do not seem to inhibit Ar out-diffusion. This behavior contrasts markedly with the strong coupling found in furnace annealing.
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Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1980
Volume
37
Issue
1
Start / End Page
81 / 83
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
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Rimini, E., Chu, W. K., Baglin, J. E. E., Tan, T. Y., & Hodgson, R. T. (1980). Laser annealing of silicon implanted with both argon and arsenic. Applied Physics Letters, 37(1), 81–83. https://doi.org/10.1063/1.91711
Rimini, E., W. K. Chu, J. E. E. Baglin, T. Y. Tan, and R. T. Hodgson. “Laser annealing of silicon implanted with both argon and arsenic.” Applied Physics Letters 37, no. 1 (December 1, 1980): 81–83. https://doi.org/10.1063/1.91711.
Rimini E, Chu WK, Baglin JEE, Tan TY, Hodgson RT. Laser annealing of silicon implanted with both argon and arsenic. Applied Physics Letters. 1980 Dec 1;37(1):81–3.
Rimini, E., et al. “Laser annealing of silicon implanted with both argon and arsenic.” Applied Physics Letters, vol. 37, no. 1, Dec. 1980, pp. 81–83. Scopus, doi:10.1063/1.91711.
Rimini E, Chu WK, Baglin JEE, Tan TY, Hodgson RT. Laser annealing of silicon implanted with both argon and arsenic. Applied Physics Letters. 1980 Dec 1;37(1):81–83.
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1980
Volume
37
Issue
1
Start / End Page
81 / 83
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences