Extended high temperature Al gettering for improvement and homogenization of minority carrier diffusion lengths in multicrystalline Si
Publication
, Journal Article
Joshi, SM; Gösele, UM; Tan, TY
Published in: Solar Energy Materials and Solar Cells
December 15, 2001
Multicrystalline Si for photovoltaic applications is a very inhomogeneous material with localized regions of high dislocation density and large impurity and precipitate concentrations which limit solar cell efficiency by acting as carrier recombination sites. Due to slow dissolution of precipitates in multicrystalline Si, these regions cannot be improved by conventional P and Al gettering treatments for removal of metal impurities which give good results for single crystal Si. It is shown that an extended high temperature Al gettering treatment can improve minority carrier diffusion lengths in these low quality regions and homogenize the electrical properties of multicrystalline Si wafers. © 2001 Elsevier Science B.V. All rights reserved.
Duke Scholars
Published In
Solar Energy Materials and Solar Cells
DOI
ISSN
0927-0248
Publication Date
December 15, 2001
Volume
70
Issue
2
Start / End Page
231 / 238
Related Subject Headings
- Energy
- 51 Physical sciences
- 40 Engineering
- 34 Chemical sciences
- 09 Engineering
- 03 Chemical Sciences
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Joshi, S. M., Gösele, U. M., & Tan, T. Y. (2001). Extended high temperature Al gettering for improvement and homogenization of minority carrier diffusion lengths in multicrystalline Si. Solar Energy Materials and Solar Cells, 70(2), 231–238. https://doi.org/10.1016/S0927-0248(01)00029-0
Joshi, S. M., U. M. Gösele, and T. Y. Tan. “Extended high temperature Al gettering for improvement and homogenization of minority carrier diffusion lengths in multicrystalline Si.” Solar Energy Materials and Solar Cells 70, no. 2 (December 15, 2001): 231–38. https://doi.org/10.1016/S0927-0248(01)00029-0.
Joshi SM, Gösele UM, Tan TY. Extended high temperature Al gettering for improvement and homogenization of minority carrier diffusion lengths in multicrystalline Si. Solar Energy Materials and Solar Cells. 2001 Dec 15;70(2):231–8.
Joshi, S. M., et al. “Extended high temperature Al gettering for improvement and homogenization of minority carrier diffusion lengths in multicrystalline Si.” Solar Energy Materials and Solar Cells, vol. 70, no. 2, Dec. 2001, pp. 231–38. Scopus, doi:10.1016/S0927-0248(01)00029-0.
Joshi SM, Gösele UM, Tan TY. Extended high temperature Al gettering for improvement and homogenization of minority carrier diffusion lengths in multicrystalline Si. Solar Energy Materials and Solar Cells. 2001 Dec 15;70(2):231–238.
Published In
Solar Energy Materials and Solar Cells
DOI
ISSN
0927-0248
Publication Date
December 15, 2001
Volume
70
Issue
2
Start / End Page
231 / 238
Related Subject Headings
- Energy
- 51 Physical sciences
- 40 Engineering
- 34 Chemical sciences
- 09 Engineering
- 03 Chemical Sciences
- 02 Physical Sciences