The Effect of Interface and Alloy Quality on the DC and RF Performance of Ga0.47In0.53As-Al0.48In0.52As HEMT's
Publication
, Journal Article
Brown, AS; Mishra, UK; Rosenbaum, SE
Published in: IEEE Transactions on Electron Devices
January 1, 1989
Ga0.47ln0.53As-Al0.48In0.52As high electron mobility transistors (HEMT's) were fabricated in material with varying degrees of alloy and interface disorder. The conductivities of the epitaxial layers are highest for material with the smallest amount of interface roughness and lowest for samples with poor quality interfaces. The trans-conductances and unity current gain cutoff frequencies of the fabricated devices with 0.2-μm gates are similarly affected. © 1989 IEEE
Duke Scholars
Published In
IEEE Transactions on Electron Devices
DOI
EISSN
1557-9646
ISSN
0018-9383
Publication Date
January 1, 1989
Volume
36
Issue
4
Start / End Page
641 / 645
Related Subject Headings
- Applied Physics
- 0906 Electrical and Electronic Engineering
Citation
APA
Chicago
ICMJE
MLA
NLM
Brown, A. S., Mishra, U. K., & Rosenbaum, S. E. (1989). The Effect of Interface and Alloy Quality on the DC and RF Performance of Ga0.47In0.53As-Al0.48In0.52As HEMT's. IEEE Transactions on Electron Devices, 36(4), 641–645. https://doi.org/10.1109/16.22468
Brown, A. S., U. K. Mishra, and S. E. Rosenbaum. “The Effect of Interface and Alloy Quality on the DC and RF Performance of Ga0.47In0.53As-Al0.48In0.52As HEMT's.” IEEE Transactions on Electron Devices 36, no. 4 (January 1, 1989): 641–45. https://doi.org/10.1109/16.22468.
Brown AS, Mishra UK, Rosenbaum SE. The Effect of Interface and Alloy Quality on the DC and RF Performance of Ga0.47In0.53As-Al0.48In0.52As HEMT's. IEEE Transactions on Electron Devices. 1989 Jan 1;36(4):641–5.
Brown, A. S., et al. “The Effect of Interface and Alloy Quality on the DC and RF Performance of Ga0.47In0.53As-Al0.48In0.52As HEMT's.” IEEE Transactions on Electron Devices, vol. 36, no. 4, Jan. 1989, pp. 641–45. Scopus, doi:10.1109/16.22468.
Brown AS, Mishra UK, Rosenbaum SE. The Effect of Interface and Alloy Quality on the DC and RF Performance of Ga0.47In0.53As-Al0.48In0.52As HEMT's. IEEE Transactions on Electron Devices. 1989 Jan 1;36(4):641–645.
Published In
IEEE Transactions on Electron Devices
DOI
EISSN
1557-9646
ISSN
0018-9383
Publication Date
January 1, 1989
Volume
36
Issue
4
Start / End Page
641 / 645
Related Subject Headings
- Applied Physics
- 0906 Electrical and Electronic Engineering