A 2-GHz Three-Stage AlInAs—GaInAs—InP HEMT MMIC Low-Noise Amplifier
Publication
, Journal Article
Rosenbaum, SE; Jelloian, LM; Larson, LE; Mishra, UK; Pierson, DA; Thompson, MS; Liu, T; Brown, AS
Published in: IEEE Microwave and Guided Wave Letters
January 1, 1993
A three-stage monolithic microwave integrated circuit (MMIC) low-noise amplifier (LNA) has been fabricated using 0.15-μm gate-length InP-based (AlInAs—GaInAs) high electron mobility transistor (HEMT) technology. The LNA exhibited less than 0.5-dB noise figure and greater than 35-dB gain from 2.25 to 2.5 GHz. The input and output return loss exceeded 15 dB across the band. These results are believed to be the best reported to date from a MMIC amplifier in this frequency range. © 1993 IEEE
Duke Scholars
Published In
IEEE Microwave and Guided Wave Letters
DOI
ISSN
1051-8207
Publication Date
January 1, 1993
Volume
3
Issue
8
Start / End Page
265 / 267
Related Subject Headings
- Networking & Telecommunications
- 4006 Communications engineering
- 1005 Communications Technologies
- 0906 Electrical and Electronic Engineering
- 0205 Optical Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Rosenbaum, S. E., Jelloian, L. M., Larson, L. E., Mishra, U. K., Pierson, D. A., Thompson, M. S., … Brown, A. S. (1993). A 2-GHz Three-Stage AlInAs—GaInAs—InP HEMT MMIC Low-Noise Amplifier. IEEE Microwave and Guided Wave Letters, 3(8), 265–267. https://doi.org/10.1109/75.242220
Rosenbaum, S. E., L. M. Jelloian, L. E. Larson, U. K. Mishra, D. A. Pierson, M. S. Thompson, T. Liu, and A. S. Brown. “A 2-GHz Three-Stage AlInAs—GaInAs—InP HEMT MMIC Low-Noise Amplifier.” IEEE Microwave and Guided Wave Letters 3, no. 8 (January 1, 1993): 265–67. https://doi.org/10.1109/75.242220.
Rosenbaum SE, Jelloian LM, Larson LE, Mishra UK, Pierson DA, Thompson MS, et al. A 2-GHz Three-Stage AlInAs—GaInAs—InP HEMT MMIC Low-Noise Amplifier. IEEE Microwave and Guided Wave Letters. 1993 Jan 1;3(8):265–7.
Rosenbaum, S. E., et al. “A 2-GHz Three-Stage AlInAs—GaInAs—InP HEMT MMIC Low-Noise Amplifier.” IEEE Microwave and Guided Wave Letters, vol. 3, no. 8, Jan. 1993, pp. 265–67. Scopus, doi:10.1109/75.242220.
Rosenbaum SE, Jelloian LM, Larson LE, Mishra UK, Pierson DA, Thompson MS, Liu T, Brown AS. A 2-GHz Three-Stage AlInAs—GaInAs—InP HEMT MMIC Low-Noise Amplifier. IEEE Microwave and Guided Wave Letters. 1993 Jan 1;3(8):265–267.
Published In
IEEE Microwave and Guided Wave Letters
DOI
ISSN
1051-8207
Publication Date
January 1, 1993
Volume
3
Issue
8
Start / End Page
265 / 267
Related Subject Headings
- Networking & Telecommunications
- 4006 Communications engineering
- 1005 Communications Technologies
- 0906 Electrical and Electronic Engineering
- 0205 Optical Physics