Growth of InN on 6H-SiC by plasma assisted molecular beam epitaxy
Publication
, Journal Article
Brown, AS; Kim, T-H; Choi, S; Wu, P; Morse, M; Losurdo, M; Giangregorio, MM; Bruno, G; Moto, A
Published in: Physica Status Solidi C: Current Topics in Solid State Physics
2006
We have investigated the growth of InN films by plasma assisted molecular beam epitaxy on the Si-face of 6H-SiC(0001). Growth is performed under In-rich conditions using a two-step process consisting of the deposition of a thin, low-temperature 350°C InN buffer layer, followed by the subsequent deposition of the InN epitaxial layer at 450°C. The effect of buffer annealing is investigated. The structural and optical evolution of the growing layer has been monitored in real time using RHEED and spectroscopic ellipsometry. Structural, morphological, electrical and optic properties are discussed. © 2006 WILEY-VCH Verlag GmbH and Co. KGaA.
Duke Scholars
Published In
Physica Status Solidi C: Current Topics in Solid State Physics
DOI
Publication Date
2006
Volume
3
Start / End Page
1531 / 1535
Location
Bremen, Germany
Related Subject Headings
- 5104 Condensed matter physics
- 4016 Materials engineering
- 0912 Materials Engineering
- 0206 Quantum Physics
- 0204 Condensed Matter Physics
Citation
APA
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Brown, A. S., Kim, T.-H., Choi, S., Wu, P., Morse, M., Losurdo, M., … Moto, A. (2006). Growth of InN on 6H-SiC by plasma assisted molecular beam epitaxy. Physica Status Solidi C: Current Topics in Solid State Physics, 3, 1531–1535. https://doi.org/10.1002/pssc.200565150
Brown, April S., Tong-Ho Kim, Soojeong Choi, Pae Wu, Michael Morse, Maria Losurdo, Maria M. Giangregorio, Giovanni Bruno, and Akihiro Moto. “Growth of InN on 6H-SiC by plasma assisted molecular beam epitaxy.” Physica Status Solidi C: Current Topics in Solid State Physics 3 (2006): 1531–35. https://doi.org/10.1002/pssc.200565150.
Brown AS, Kim T-H, Choi S, Wu P, Morse M, Losurdo M, et al. Growth of InN on 6H-SiC by plasma assisted molecular beam epitaxy. Physica Status Solidi C: Current Topics in Solid State Physics. 2006;3:1531–5.
Brown, April S., et al. “Growth of InN on 6H-SiC by plasma assisted molecular beam epitaxy.” Physica Status Solidi C: Current Topics in Solid State Physics, vol. 3, 2006, pp. 1531–35. Manual, doi:10.1002/pssc.200565150.
Brown AS, Kim T-H, Choi S, Wu P, Morse M, Losurdo M, Giangregorio MM, Bruno G, Moto A. Growth of InN on 6H-SiC by plasma assisted molecular beam epitaxy. Physica Status Solidi C: Current Topics in Solid State Physics. 2006;3:1531–1535.
Published In
Physica Status Solidi C: Current Topics in Solid State Physics
DOI
Publication Date
2006
Volume
3
Start / End Page
1531 / 1535
Location
Bremen, Germany
Related Subject Headings
- 5104 Condensed matter physics
- 4016 Materials engineering
- 0912 Materials Engineering
- 0206 Quantum Physics
- 0204 Condensed Matter Physics