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Growth of high performance InxGa1-xAs (.52 < x <.9) - (Al.48In.52As) high electron mobility transistors by MBE

Publication ,  Journal Article
Brown, AS; Schmitz, AE; Nguyen, LD; Henige, JA; Larson, LE
Published in: IEEE International Conferece on Indium Phosphide and Related Materials
1994

The paper reports the successful attempts at significantly improving the electron mobility in thin channel, device structures with high two-dimensional electron gas (2DEG) concentrations. InGaAs-AlInAs modulation-doped structures were grown by MBE in a Riber 2300 system on (100)-oriented InP substrates. The highest room temperature mobility achieved to date for low sheet charge and high sheet charge samples were realized in a structure with a 10nm 80% In channel utilizing a stress-compensation prelayer.

Duke Scholars

Published In

IEEE International Conferece on Indium Phosphide and Related Materials

DOI

Publication Date

1994

Start / End Page

263 / 266

Location

Santa Barbara, CA, USA
 

Citation

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Brown, A. S., Schmitz, A. E., Nguyen, L. D., Henige, J. A., & Larson, L. E. (1994). Growth of high performance InxGa1-xAs (.52 < x <.9) - (Al.48In.52As) high electron mobility transistors by MBE. IEEE International Conferece on Indium Phosphide and Related Materials, 263–266. https://doi.org/10.1109/ICIPRM.1994.328217
Brown, A. S., A. E. Schmitz, L. D. Nguyen, J. A. Henige, and L. E. Larson. “Growth of high performance InxGa1-xAs (.52 < x <.9) - (Al.48In.52As) high electron mobility transistors by MBE.” IEEE International Conferece on Indium Phosphide and Related Materials, 1994, 263–66. https://doi.org/10.1109/ICIPRM.1994.328217.
Brown AS, Schmitz AE, Nguyen LD, Henige JA, Larson LE. Growth of high performance InxGa1-xAs (.52 < x <.9) - (Al.48In.52As) high electron mobility transistors by MBE. IEEE International Conferece on Indium Phosphide and Related Materials. 1994;263–6.
Brown, A. S., et al. “Growth of high performance InxGa1-xAs (.52 < x <.9) - (Al.48In.52As) high electron mobility transistors by MBE.” IEEE International Conferece on Indium Phosphide and Related Materials, 1994, pp. 263–66. Manual, doi:10.1109/ICIPRM.1994.328217.
Brown AS, Schmitz AE, Nguyen LD, Henige JA, Larson LE. Growth of high performance InxGa1-xAs (.52 < x <.9) - (Al.48In.52As) high electron mobility transistors by MBE. IEEE International Conferece on Indium Phosphide and Related Materials. 1994;263–266.

Published In

IEEE International Conferece on Indium Phosphide and Related Materials

DOI

Publication Date

1994

Start / End Page

263 / 266

Location

Santa Barbara, CA, USA