Optical and structural properties of strained InAlAs/InAsx P1-x multi-quantum wells grown by solid source molecular beam epitaxy
Publication
, Journal Article
Kim, TH; Brown, AS; Metzger, RA
Published in: Journal of Applied Physics
January 1, 1999
The growth of InP/InAsxP1-x and InAlAs/InAsxP1-x heterostructures was studied using P and As sources. The As4 flux is incorporated much less efficiently into higher As percentage InAsP due to the higher strain in the grown InAsP film. The InP/InAsP multiple quantum wells showed photoluminescence at full width at half maximums of 12-19 meV at 4.2 K.
Duke Scholars
Published In
Journal of Applied Physics
DOI
ISSN
0021-8979
Publication Date
January 1, 1999
Volume
86
Issue
5
Start / End Page
2622 / 2627
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 49 Mathematical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
- 01 Mathematical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Kim, T. H., Brown, A. S., & Metzger, R. A. (1999). Optical and structural properties of strained InAlAs/InAsx P1-x multi-quantum wells grown by solid source molecular beam epitaxy. Journal of Applied Physics, 86(5), 2622–2627. https://doi.org/10.1063/1.371101
Kim, T. H., A. S. Brown, and R. A. Metzger. “Optical and structural properties of strained InAlAs/InAsx P1-x multi-quantum wells grown by solid source molecular beam epitaxy.” Journal of Applied Physics 86, no. 5 (January 1, 1999): 2622–27. https://doi.org/10.1063/1.371101.
Kim TH, Brown AS, Metzger RA. Optical and structural properties of strained InAlAs/InAsx P1-x multi-quantum wells grown by solid source molecular beam epitaxy. Journal of Applied Physics. 1999 Jan 1;86(5):2622–7.
Kim, T. H., et al. “Optical and structural properties of strained InAlAs/InAsx P1-x multi-quantum wells grown by solid source molecular beam epitaxy.” Journal of Applied Physics, vol. 86, no. 5, Jan. 1999, pp. 2622–27. Scopus, doi:10.1063/1.371101.
Kim TH, Brown AS, Metzger RA. Optical and structural properties of strained InAlAs/InAsx P1-x multi-quantum wells grown by solid source molecular beam epitaxy. Journal of Applied Physics. 1999 Jan 1;86(5):2622–2627.
Published In
Journal of Applied Physics
DOI
ISSN
0021-8979
Publication Date
January 1, 1999
Volume
86
Issue
5
Start / End Page
2622 / 2627
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 49 Mathematical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
- 01 Mathematical Sciences