Incorporation of Mg in GaN grown by plasma-assisted molecular beam epitaxy

We describe dramatically decreased Mg incorporation in GaN above a critical Mg flux. Secondary ion mass spectroscopy analysis showed a linear increase in Mg concentration up to a flux equivalent to 8.0×10-10 Torr beam equivalent pressure (BEP) and 1.6×10-9 Torr BEP at 550 and 615°C respectively, beyond which the Mg incorporation was reduced by factors of 10 for 550°C, and 2 for 615°C. In a transition region between this critical flux and higher flux, a time dependent incorporation phenomenon was observed. An increase in the GaN growth rate was also observed in the presence of Mg above the critical flux. © 2000 American Institute of Physics.

Duke Scholars

Author April S. Brown Electrical and Computer Engineering