DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF MBE Ga//0//. //4//7In//0//. //5//3As PLANAR DOPED BARRIERS ON InP SUBSTRATES.
Publication
, Journal Article
Brown, AS; Wicks, GW; Eastman, LF; Palmateer, SC
Published in: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
April 1, 1983
The potential barrier height in planar-doped barrier structures is particularly sensitive to the concentration of background impurities present in the nominally undoped regions. MBE grown GaInAs lattice matched to InP typically has n-type background carrier concentrations in the 10**1**6 cm** minus **3 range. This high level can cause lowering of the barrier to near zero. By subjecting the InP substrates to a heat treatment process before growth in order to inhibit impurity outdiffusion higher purity GaInAs can be grown and planar-doped barrier devices with more reproducible characteristics are expected.
Duke Scholars
Published In
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
DOI
ISSN
0734-211X
Publication Date
April 1, 1983
Volume
2
Issue
2
Start / End Page
194 / 196
Citation
APA
Chicago
ICMJE
MLA
NLM
Brown, A. S., Wicks, G. W., Eastman, L. F., & Palmateer, S. C. (1983). DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF MBE Ga//0//. //4//7In//0//. //5//3As PLANAR DOPED BARRIERS ON InP SUBSTRATES. Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 2(2), 194–196. https://doi.org/10.1116/1.582777
Brown, A. S., G. W. Wicks, L. F. Eastman, and S. C. Palmateer. “DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF MBE Ga//0//. //4//7In//0//. //5//3As PLANAR DOPED BARRIERS ON InP SUBSTRATES.” Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 2, no. 2 (April 1, 1983): 194–96. https://doi.org/10.1116/1.582777.
Brown AS, Wicks GW, Eastman LF, Palmateer SC. DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF MBE Ga//0//. //4//7In//0//. //5//3As PLANAR DOPED BARRIERS ON InP SUBSTRATES. Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena. 1983 Apr 1;2(2):194–6.
Brown, A. S., et al. “DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF MBE Ga//0//. //4//7In//0//. //5//3As PLANAR DOPED BARRIERS ON InP SUBSTRATES.” Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, vol. 2, no. 2, Apr. 1983, pp. 194–96. Scopus, doi:10.1116/1.582777.
Brown AS, Wicks GW, Eastman LF, Palmateer SC. DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF MBE Ga//0//. //4//7In//0//. //5//3As PLANAR DOPED BARRIERS ON InP SUBSTRATES. Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena. 1983 Apr 1;2(2):194–196.
Published In
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
DOI
ISSN
0734-211X
Publication Date
April 1, 1983
Volume
2
Issue
2
Start / End Page
194 / 196