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Modification of quantum dot properties via surface exchange and annealing: Substrate temperature effects

Publication ,  Journal Article
Shen, JJ; Brown, AS; Metzger, RA; Sievers, B; Bottomley, L; Eckert, P; Carter, WB
Published in: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
January 1, 1998

Increasingly self-assembled quantum dots produced by the Stranski-Krastanov growth mode during molecular beam epitaxy are being used for both photonic and electronic devices. In order to fully realize the potential of these nanostructures, control of both the quantum dot size and the density distributions is very important. In addition, the ability to tune the confined energy states will enhance the ability to exploit these nanostructures. Herein, we report on the structural modifications induced by annealing dots under dissimilar anion fluxes. Such strain and chemical tuning enabled by annealing can be used as a means of further controlling quantum dots properties. © 1998 American Vacuum Society.

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Published In

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

DOI

ISSN

1071-1023

Publication Date

January 1, 1998

Volume

16

Issue

3

Start / End Page

1326 / 1329

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0901 Aerospace Engineering
  • 0401 Atmospheric Sciences
 

Citation

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Chicago
ICMJE
MLA
NLM
Shen, J. J., Brown, A. S., Metzger, R. A., Sievers, B., Bottomley, L., Eckert, P., & Carter, W. B. (1998). Modification of quantum dot properties via surface exchange and annealing: Substrate temperature effects. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 16(3), 1326–1329. https://doi.org/10.1116/1.590068
Shen, J. J., A. S. Brown, R. A. Metzger, B. Sievers, L. Bottomley, P. Eckert, and W. B. Carter. “Modification of quantum dot properties via surface exchange and annealing: Substrate temperature effects.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 16, no. 3 (January 1, 1998): 1326–29. https://doi.org/10.1116/1.590068.
Shen JJ, Brown AS, Metzger RA, Sievers B, Bottomley L, Eckert P, et al. Modification of quantum dot properties via surface exchange and annealing: Substrate temperature effects. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1998 Jan 1;16(3):1326–9.
Shen, J. J., et al. “Modification of quantum dot properties via surface exchange and annealing: Substrate temperature effects.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 16, no. 3, Jan. 1998, pp. 1326–29. Scopus, doi:10.1116/1.590068.
Shen JJ, Brown AS, Metzger RA, Sievers B, Bottomley L, Eckert P, Carter WB. Modification of quantum dot properties via surface exchange and annealing: Substrate temperature effects. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1998 Jan 1;16(3):1326–1329.

Published In

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

DOI

ISSN

1071-1023

Publication Date

January 1, 1998

Volume

16

Issue

3

Start / End Page

1326 / 1329

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0901 Aerospace Engineering
  • 0401 Atmospheric Sciences